Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas

Research output: Contribution to conferencePosterAcademic

Abstract

The next-generation lithography tools currently use Extreme Ultraviolet (EUV) radiation to create even smaller features on computer chips. Wherever the light travels, the high energy photons (92 eV) induce a plasma in the low pressure background gas by photoionization. Industries have realized that these plasmas are of signicant importance with respect to machine lifetime, because
impacting ions aect exposed surfaces. The mass resolved ion energy distribution function (IEDF) is therefore one of the main plasma parameters of interest.
In this research an ion mass spectrometer is used to investigate mass resolved IEDFs of ions impacting on a surface in EUV-induced plasmas. A xenon pinch discharge produces EUV radiation, which is focused into a measuring vessel with a low pressure hydrogen environment. In this vessel, photoionization creates free electrons with energies up to 76 eV, which further ionize the background
gas by electron impact ionization.
The infuence of the pressure on plasma composition and IEDFs has been investigated in the range of 0.1 to 10 Pa. In general the ion fuxes towards the surface increase with pressure. However, above 5 Pa the flux of H2+ is not affected by the increase in pressure, which is explained by the balance between the creation of H2+ and the conversion of H2+ to H3+ due to reaction with background gas molecules (H2). These measurement results will be used to benchmark plasma scaling models and verify numerical simulations.

Conference

Conference69th Annual Gaseous Electronics Conference (GEC 2016), October 10-14, 2016, Bochum, Germany
Abbreviated titleGEC 2016
CountryGermany
CityBochum
Period10/10/1614/10/16
Internet address

Fingerprint

extreme ultraviolet radiation
ions
mass spectrometers
vessels
photoionization
low pressure
gases
energy
plasma composition
xenon
free electrons
travel
electron impact
energy distribution
lithography
distribution functions
industries
chips
scaling
ionization

Keywords

  • EUV induced plasma

Cite this

van de Ven, T. H. M., Reefman, P., de Meijere, C. A., van der Horst, R., Banine, V. Y., & Beckers, J. (2016). Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas. Poster session presented at 69th Annual Gaseous Electronics Conference (GEC 2016), October 10-14, 2016, Bochum, Germany, Bochum, Germany.
van de Ven, T.H.M. ; Reefman, P. ; de Meijere, C.A. ; van der Horst, Ruud ; Banine, V.Y. ; Beckers, J./ Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas. Poster session presented at 69th Annual Gaseous Electronics Conference (GEC 2016), October 10-14, 2016, Bochum, Germany, Bochum, Germany.
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title = "Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas",
abstract = "The next-generation lithography tools currently use Extreme Ultraviolet (EUV) radiation to create even smaller features on computer chips. Wherever the light travels, the high energy photons (92 eV) induce a plasma in the low pressure background gas by photoionization. Industries have realized that these plasmas are of signicant importance with respect to machine lifetime, becauseimpacting ions aect exposed surfaces. The mass resolved ion energy distribution function (IEDF) is therefore one of the main plasma parameters of interest.In this research an ion mass spectrometer is used to investigate mass resolved IEDFs of ions impacting on a surface in EUV-induced plasmas. A xenon pinch discharge produces EUV radiation, which is focused into a measuring vessel with a low pressure hydrogen environment. In this vessel, photoionization creates free electrons with energies up to 76 eV, which further ionize the backgroundgas by electron impact ionization.The infuence of the pressure on plasma composition and IEDFs has been investigated in the range of 0.1 to 10 Pa. In general the ion fuxes towards the surface increase with pressure. However, above 5 Pa the flux of H2+ is not affected by the increase in pressure, which is explained by the balance between the creation of H2+ and the conversion of H2+ to H3+ due to reaction with background gas molecules (H2). These measurement results will be used to benchmark plasma scaling models and verify numerical simulations.",
keywords = "EUV induced plasma",
author = "{van de Ven}, T.H.M. and P. Reefman and {de Meijere}, C.A. and {van der Horst}, Ruud and V.Y. Banine and J. Beckers",
year = "2016",
month = "10",
day = "13",
language = "English",
note = "69th Annual Gaseous Electronics Conference (GEC 2016), October 10-14, 2016, Bochum, Germany, GEC 2016 ; Conference date: 10-10-2016 Through 14-10-2016",
url = "http://www.gec2016.de/, http://www.gec2016.de/",

}

van de Ven, THM, Reefman, P, de Meijere, CA, van der Horst, R, Banine, VY & Beckers, J 2016, 'Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas' 69th Annual Gaseous Electronics Conference (GEC 2016), October 10-14, 2016, Bochum, Germany, Bochum, Germany, 10/10/16 - 14/10/16, .

Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas. / van de Ven, T.H.M.; Reefman, P.; de Meijere, C.A. ; van der Horst, Ruud; Banine, V.Y.; Beckers, J.

2016. Poster session presented at 69th Annual Gaseous Electronics Conference (GEC 2016), October 10-14, 2016, Bochum, Germany, Bochum, Germany.

Research output: Contribution to conferencePosterAcademic

TY - CONF

T1 - Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas

AU - van de Ven,T.H.M.

AU - Reefman,P.

AU - de Meijere,C.A.

AU - van der Horst,Ruud

AU - Banine,V.Y.

AU - Beckers,J.

PY - 2016/10/13

Y1 - 2016/10/13

N2 - The next-generation lithography tools currently use Extreme Ultraviolet (EUV) radiation to create even smaller features on computer chips. Wherever the light travels, the high energy photons (92 eV) induce a plasma in the low pressure background gas by photoionization. Industries have realized that these plasmas are of signicant importance with respect to machine lifetime, becauseimpacting ions aect exposed surfaces. The mass resolved ion energy distribution function (IEDF) is therefore one of the main plasma parameters of interest.In this research an ion mass spectrometer is used to investigate mass resolved IEDFs of ions impacting on a surface in EUV-induced plasmas. A xenon pinch discharge produces EUV radiation, which is focused into a measuring vessel with a low pressure hydrogen environment. In this vessel, photoionization creates free electrons with energies up to 76 eV, which further ionize the backgroundgas by electron impact ionization.The infuence of the pressure on plasma composition and IEDFs has been investigated in the range of 0.1 to 10 Pa. In general the ion fuxes towards the surface increase with pressure. However, above 5 Pa the flux of H2+ is not affected by the increase in pressure, which is explained by the balance between the creation of H2+ and the conversion of H2+ to H3+ due to reaction with background gas molecules (H2). These measurement results will be used to benchmark plasma scaling models and verify numerical simulations.

AB - The next-generation lithography tools currently use Extreme Ultraviolet (EUV) radiation to create even smaller features on computer chips. Wherever the light travels, the high energy photons (92 eV) induce a plasma in the low pressure background gas by photoionization. Industries have realized that these plasmas are of signicant importance with respect to machine lifetime, becauseimpacting ions aect exposed surfaces. The mass resolved ion energy distribution function (IEDF) is therefore one of the main plasma parameters of interest.In this research an ion mass spectrometer is used to investigate mass resolved IEDFs of ions impacting on a surface in EUV-induced plasmas. A xenon pinch discharge produces EUV radiation, which is focused into a measuring vessel with a low pressure hydrogen environment. In this vessel, photoionization creates free electrons with energies up to 76 eV, which further ionize the backgroundgas by electron impact ionization.The infuence of the pressure on plasma composition and IEDFs has been investigated in the range of 0.1 to 10 Pa. In general the ion fuxes towards the surface increase with pressure. However, above 5 Pa the flux of H2+ is not affected by the increase in pressure, which is explained by the balance between the creation of H2+ and the conversion of H2+ to H3+ due to reaction with background gas molecules (H2). These measurement results will be used to benchmark plasma scaling models and verify numerical simulations.

KW - EUV induced plasma

M3 - Poster

ER -

van de Ven THM, Reefman P, de Meijere CA, van der Horst R, Banine VY, Beckers J. Ion fluxes and energies increase with pressure in EUV-induced H2 plasmas. 2016. Poster session presented at 69th Annual Gaseous Electronics Conference (GEC 2016), October 10-14, 2016, Bochum, Germany, Bochum, Germany.