Abstract
The application of a pulse shape biasing method implemented to a capacitive probe for the detn. of the ion flux in depositing plasmas is here described. To check the reliability of the method, conventional Langmuir probe and capacitive probe measurements on the same plasma mixts. are compared. The results show a good agreement between the two techniques. The capacitive probe is able to perform spatially-resolved ion flux measurements under high rate depositing conditions (2-20 nm/s), proving its tolerance to insulating layers. The measurements are performed in a remote expanding thermal plasma (ETP) reactor employing Ar as carrier gas and NH3 and SiH4 as deposition precursors.
Original language | English |
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Title of host publication | Annual Technical Conference Proceedings - Society of Vacuum Coaters, 51st |
Pages | 593-597 |
Publication status | Published - 2008 |