Ion-channeling analysis of boron clusters in silicon

L.J.M. Selen; F.J.J. Janssen; L.J. IJzendoorn, van; M.J.A. Voigt, de; M.J.J. Theunissen; P.J.M. Smulders; T.J. Eijkemans

doi:10.1063/1.1405838

Ion-channeling analysis of boron clusters in silicon

L.J.M. Selen
, F.J.J. Janssen
, L.J. IJzendoorn, van
, M.J.A. Voigt, de
, M.J.J. Theunissen
, P.J.M. Smulders
, T.J. Eijkemans

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We have measured axially channeled Rutherford backscattering spectra of Si1–xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements.

Original language	English
Pages (from-to)	4741-4747
Journal	Journal of Applied Physics
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.1405838
Publication status	Published - 2001

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title = "Ion-channeling analysis of boron clusters in silicon",

abstract = "We have measured axially channeled Rutherford backscattering spectra of Si1{\textendash}xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements.",

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year = "2001",

doi = "10.1063/1.1405838",

language = "English",

volume = "90",

pages = "4741--4747",

journal = "Journal of Applied Physics",

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T1 - Ion-channeling analysis of boron clusters in silicon

AU - Selen, L.J.M.

AU - Janssen, F.J.J.

AU - IJzendoorn, van, L.J.

AU - Voigt, de, M.J.A.

AU - Theunissen, M.J.J.

AU - Smulders, P.J.M.

AU - Eijkemans, T.J.

PY - 2001

Y1 - 2001

N2 - We have measured axially channeled Rutherford backscattering spectra of Si1–xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements.

AB - We have measured axially channeled Rutherford backscattering spectra of Si1–xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements.

U2 - 10.1063/1.1405838

DO - 10.1063/1.1405838

M3 - Article

SN - 0021-8979

VL - 90

SP - 4741

EP - 4747

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Ion-channeling analysis of boron clusters in silicon

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