Ion-channeling analysis of boron clusters in silicon

L.J.M. Selen, F.J.J. Janssen, L.J. IJzendoorn, van, M.J.A. Voigt, de, M.J.J. Theunissen, P.J.M. Smulders, T.J. Eijkemans

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Abstract

We have measured axially channeled Rutherford backscattering spectra of Si1–xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements.
Original languageEnglish
Pages (from-to)4741-4747
JournalJournal of Applied Physics
Volume90
Issue number9
DOIs
Publication statusPublished - 2001

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