Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4-H2 discharge in the a-Si: H to μc-Si:H transition regime

K. Landheer; W.J. Goedheer; I. Poulios; R.E.I. Schropp; J.K. Rath

doi:10.1002/pssa.201532917

Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH₄-H₂ discharge in the a-Si: H to μc-Si:H transition regime

K. Landheer, W.J. Goedheer, I. Poulios, R.E.I. Schropp, J.K. Rath

Plasma & Materials Processing

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Abstract

We studied ion bombardment during amorphous silicon layer deposition for hydrogen dilutions 5 to 59 with mass resolved IED measurements and simulations. The trends in the peak position of H₂ ⁺ and SiH_y ⁺ IEDs with increasing hydrogen dilution show good agreement between measurements and simulations. A difference in asymmetry of the discharge between simulations and measurements results in a roughly 6eV lower peak position for the simulations. An increasing SiH_y ⁺ ion flux with increasing hydrogen dilution is measured. We hypothesize that this is due to amorphous silicon etching that is enhanced by H_y ⁺ ion bombardment.

Original language	English
Pages (from-to)	1680-1685
Number of pages	6
Journal	Physica Status Solidi A : Applications and material science
Volume	213
Issue number	7
DOIs	https://doi.org/10.1002/pssa.201532917
Publication status	Published - Jul 2016

Keywords

Amorphous materials
Hydrogen etching
Ion bombardment
Plasma enhanced chemical vapor deposition
Silicon

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10.1002/pssa.201532917

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title = "Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4-H2 discharge in the a-Si: H to μc-Si:H transition regime",

abstract = "We studied ion bombardment during amorphous silicon layer deposition for hydrogen dilutions 5 to 59 with mass resolved IED measurements and simulations. The trends in the peak position of H2 + and SiHy + IEDs with increasing hydrogen dilution show good agreement between measurements and simulations. A difference in asymmetry of the discharge between simulations and measurements results in a roughly 6eV lower peak position for the simulations. An increasing SiHy + ion flux with increasing hydrogen dilution is measured. We hypothesize that this is due to amorphous silicon etching that is enhanced by Hy + ion bombardment.",

keywords = "Amorphous materials, Hydrogen etching, Ion bombardment, Plasma enhanced chemical vapor deposition, Silicon",

author = "K. Landheer and W.J. Goedheer and I. Poulios and R.E.I. Schropp and J.K. Rath",

year = "2016",

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doi = "10.1002/pssa.201532917",

language = "English",

volume = "213",

pages = "1680--1685",

journal = "Physica Status Solidi A : Applications and material science",

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publisher = "Wiley-VCH Verlag",

number = "7",

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Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH₄-H₂ discharge in the a-Si: H to μc-Si:H transition regime. / Landheer, K.; Goedheer, W.J.; Poulios, I. et al.
In: Physica Status Solidi A : Applications and material science, Vol. 213, No. 7, 07.2016, p. 1680-1685.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4-H2 discharge in the a-Si

T2 - H to μc-Si:H transition regime

AU - Landheer, K.

AU - Goedheer, W.J.

AU - Poulios, I.

AU - Schropp, R.E.I.

AU - Rath, J.K.

PY - 2016/7

Y1 - 2016/7

N2 - We studied ion bombardment during amorphous silicon layer deposition for hydrogen dilutions 5 to 59 with mass resolved IED measurements and simulations. The trends in the peak position of H2 + and SiHy + IEDs with increasing hydrogen dilution show good agreement between measurements and simulations. A difference in asymmetry of the discharge between simulations and measurements results in a roughly 6eV lower peak position for the simulations. An increasing SiHy + ion flux with increasing hydrogen dilution is measured. We hypothesize that this is due to amorphous silicon etching that is enhanced by Hy + ion bombardment.

AB - We studied ion bombardment during amorphous silicon layer deposition for hydrogen dilutions 5 to 59 with mass resolved IED measurements and simulations. The trends in the peak position of H2 + and SiHy + IEDs with increasing hydrogen dilution show good agreement between measurements and simulations. A difference in asymmetry of the discharge between simulations and measurements results in a roughly 6eV lower peak position for the simulations. An increasing SiHy + ion flux with increasing hydrogen dilution is measured. We hypothesize that this is due to amorphous silicon etching that is enhanced by Hy + ion bombardment.

KW - Amorphous materials

KW - Hydrogen etching

KW - Ion bombardment

KW - Plasma enhanced chemical vapor deposition

KW - Silicon

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DO - 10.1002/pssa.201532917

M3 - Article

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SN - 1862-6300

VL - 213

SP - 1680

EP - 1685

JO - Physica Status Solidi A : Applications and material science

JF - Physica Status Solidi A : Applications and material science

IS - 7

ER -

Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH₄-H₂ discharge in the a-Si: H to μc-Si:H transition regime

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