Ion assisted ETP-CVD a-Si:H at well defined ion energies

M. A. Wank, R. A.C.M.M. van Swaaij, M. C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)


Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
EditorsA. Flewitt, Q. Wang, J. Hou, S. Uchikoga, A. Nathan
Place of PublicationWarrendale, Pa.
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781605111261
Publication statusPublished - 1 Dec 2009
Event2009 MRS Spring Meeting & Exhibit - San Francisco, United States
Duration: 13 Apr 200917 Apr 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2009 MRS Spring Meeting & Exhibit
Country/TerritoryUnited States
CitySan Francisco
OtherSymposium held at the 2009 MRS Spring Meeting
Internet address


Dive into the research topics of 'Ion assisted ETP-CVD a-Si:H at well defined ion energies'. Together they form a unique fingerprint.

Cite this