Ion assisted ETP-CVD a-Si:H at well defined ion energies

M. A. Wank; R. A.C.M.M. van Swaaij; M. C.M. van de Sanden

doi:10.1557/PROC-1153-A17-06

Ion assisted ETP-CVD a-Si:H at well defined ion energies

M. A. Wank, R. A.C.M.M. van Swaaij, M. C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
Editors	A. Flewitt, Q. Wang, J. Hou, S. Uchikoga, A. Nathan
Place of Publication	Warrendale, Pa.
Publisher	Materials Research Society
Pages	339-344
Number of pages	6
ISBN (Print)	9781605111261
DOIs	https://doi.org/10.1557/PROC-1153-A17-06
Publication status	Published - 1 Dec 2009
Event	2009 MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 13 Apr 2009 → 17 Apr 2009 https://www.mrs.org/spring2009 http://www.mrs.org/s09-program-a/

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1153
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	13/04/09 → 17/04/09
Other	Symposium held at the 2009 MRS Spring Meeting
Internet address	https://www.mrs.org/spring2009 http://www.mrs.org/s09-program-a/

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10.1557/PROC-1153-A17-06

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Wank, M. A., van Swaaij, R. A. C. M. M., & van de Sanden, M. C. M. (2009). Ion assisted ETP-CVD a-Si:H at well defined ion energies. In A. Flewitt, Q. Wang, J. Hou, S. Uchikoga, & A. Nathan (Eds.), Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009 (pp. 339-344). (Materials Research Society Symposium Proceedings; Vol. 1153). Materials Research Society. https://doi.org/10.1557/PROC-1153-A17-06

Wank, M. A. ; van Swaaij, R. A.C.M.M. ; van de Sanden, M. C.M. / Ion assisted ETP-CVD a-Si:H at well defined ion energies. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. editor / A. Flewitt ; Q. Wang ; J. Hou ; S. Uchikoga ; A. Nathan. Warrendale, Pa. : Materials Research Society, 2009. pp. 339-344 (Materials Research Society Symposium Proceedings).

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abstract = "Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.",

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Wank, MA, van Swaaij, RACMM & van de Sanden, MCM 2009, Ion assisted ETP-CVD a-Si:H at well defined ion energies. in A Flewitt, Q Wang, J Hou, S Uchikoga & A Nathan (eds), Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Materials Research Society Symposium Proceedings, vol. 1153, Materials Research Society, Warrendale, Pa., pp. 339-344, 2009 MRS Spring Meeting & Exhibit, San Francisco, California, United States, 13/04/09. https://doi.org/10.1557/PROC-1153-A17-06

Ion assisted ETP-CVD a-Si:H at well defined ion energies. / Wank, M. A.; van Swaaij, R. A.C.M.M.; van de Sanden, M. C.M.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. ed. / A. Flewitt; Q. Wang; J. Hou; S. Uchikoga; A. Nathan. Warrendale, Pa.: Materials Research Society, 2009. p. 339-344 (Materials Research Society Symposium Proceedings; Vol. 1153).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Wank, M. A.

AU - van Swaaij, R. A.C.M.M.

AU - van de Sanden, M. C.M.

PY - 2009/12/1

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N2 - Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.

AB - Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.

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Wank MA, van Swaaij RACMM, van de Sanden MCM. Ion assisted ETP-CVD a-Si:H at well defined ion energies. In Flewitt A, Wang Q, Hou J, Uchikoga S, Nathan A, editors, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Warrendale, Pa.: Materials Research Society. 2009. p. 339-344. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-1153-A17-06

Ion assisted ETP-CVD a-Si:H at well defined ion energies

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