Ion assisted ETP-CVD a-Si:H at well defined ion energies

M. A. Wank, R. A.C.M.M. van Swaaij, M. C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
EditorsA. Flewitt, Q. Wang, J. Hou, S. Uchikoga, A. Nathan
Place of PublicationWarrendale, Pa.
PublisherMaterials Research Society
Pages339-344
Number of pages6
ISBN (Print)9781605111261
DOIs
Publication statusPublished - 1 Dec 2009
EventAmorphous and Polycrystalline Thin-Film Silicon Science and Technology 2009, April 13-17, 2009, San Francisco, CA, USA - San Francisco, CA, United States
Duration: 13 Apr 200917 Apr 2009
http://www.mrs.org/s09-program-a/

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1153
ISSN (Print)0272-9172

Conference

ConferenceAmorphous and Polycrystalline Thin-Film Silicon Science and Technology 2009, April 13-17, 2009, San Francisco, CA, USA
CountryUnited States
CitySan Francisco, CA
Period13/04/0917/04/09
OtherSymposium held at the 2009 MRS Spring Meeting
Internet address

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    Wank, M. A., van Swaaij, R. A. C. M. M., & van de Sanden, M. C. M. (2009). Ion assisted ETP-CVD a-Si:H at well defined ion energies. In A. Flewitt, Q. Wang, J. Hou, S. Uchikoga, & A. Nathan (Eds.), Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009 (pp. 339-344). (Materials Research Society Symposium Proceedings; Vol. 1153). Materials Research Society. https://doi.org/10.1557/PROC-1153-A17-06