Investigation on the origin of terahertz waves generated by dc-biased multimode semiconductor lasers at room temperature

Sylwester Latkowski; Frederic Surre; Ramon Maldonado-Basilio; Pascal Landais

doi:10.1063/1.3050455

Investigation on the origin of terahertz waves generated by dc-biased multimode semiconductor lasers at room temperature

Sylwester Latkowski, Frederic Surre, Ramon Maldonado-Basilio, Pascal Landais

Research output: Contribution to journal › Article › Academic › peer-review

18 Citations (Scopus)

Abstract

A technique to measure a terahertz wave generated by spectrum tailored Fabry-Pérot lasers (FP) is assessed. A dc-biased and 25 °C temperature controlled FP is probed by a continuous wave signal, tuned at 20 nm away from its lasing modes. With a 0.02 nm resolution optical spectrum analyzer (OSA), the terahertz generated signal frequency is measured from the interval between the probe and its side-band modulations. The terahertz waves emitted by these FPs are measured at 370±5 GHz and at 1.157±0.005 THz, respectively, within a precision set by our OSA. The origin of the terahertz wave is due to passive mode-locked through intracavity four-wave-mixing processes.

Original language	English
Pages (from-to)	241110
Journal	Applied Physics Letters
Volume	93
Issue number	24
DOIs	https://doi.org/10.1063/1.3050455
Publication status	Published - 1 Dec 2008
Externally published	Yes

Keywords

Radiowave and microwave technology
Semiconductor lasers
laser diodes
Modulation tuning and mode locking
Phase conjugation
photorefractive and Kerr effects

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10.1063/1.3050455

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title = "Investigation on the origin of terahertz waves generated by dc-biased multimode semiconductor lasers at room temperature",

abstract = "A technique to measure a terahertz wave generated by spectrum tailored Fabry-P{\'e}rot lasers (FP) is assessed. A dc-biased and 25 °C temperature controlled FP is probed by a continuous wave signal, tuned at 20 nm away from its lasing modes. With a 0.02 nm resolution optical spectrum analyzer (OSA), the terahertz generated signal frequency is measured from the interval between the probe and its side-band modulations. The terahertz waves emitted by these FPs are measured at 370±5 GHz and at 1.157±0.005 THz, respectively, within a precision set by our OSA. The origin of the terahertz wave is due to passive mode-locked through intracavity four-wave-mixing processes.",

keywords = "Radiowave and microwave technology, Semiconductor lasers, laser diodes, Modulation tuning and mode locking, Phase conjugation, photorefractive and Kerr effects",

author = "Sylwester Latkowski and Frederic Surre and Ramon Maldonado-Basilio and Pascal Landais",

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T1 - Investigation on the origin of terahertz waves generated by dc-biased multimode semiconductor lasers at room temperature

AU - Latkowski, Sylwester

AU - Surre, Frederic

AU - Maldonado-Basilio, Ramon

AU - Landais, Pascal

PY - 2008/12/1

Y1 - 2008/12/1

N2 - A technique to measure a terahertz wave generated by spectrum tailored Fabry-Pérot lasers (FP) is assessed. A dc-biased and 25 °C temperature controlled FP is probed by a continuous wave signal, tuned at 20 nm away from its lasing modes. With a 0.02 nm resolution optical spectrum analyzer (OSA), the terahertz generated signal frequency is measured from the interval between the probe and its side-band modulations. The terahertz waves emitted by these FPs are measured at 370±5 GHz and at 1.157±0.005 THz, respectively, within a precision set by our OSA. The origin of the terahertz wave is due to passive mode-locked through intracavity four-wave-mixing processes.

AB - A technique to measure a terahertz wave generated by spectrum tailored Fabry-Pérot lasers (FP) is assessed. A dc-biased and 25 °C temperature controlled FP is probed by a continuous wave signal, tuned at 20 nm away from its lasing modes. With a 0.02 nm resolution optical spectrum analyzer (OSA), the terahertz generated signal frequency is measured from the interval between the probe and its side-band modulations. The terahertz waves emitted by these FPs are measured at 370±5 GHz and at 1.157±0.005 THz, respectively, within a precision set by our OSA. The origin of the terahertz wave is due to passive mode-locked through intracavity four-wave-mixing processes.

KW - Radiowave and microwave technology

KW - Semiconductor lasers

KW - laser diodes

KW - Modulation tuning and mode locking

KW - Phase conjugation

KW - photorefractive and Kerr effects

U2 - 10.1063/1.3050455

DO - 10.1063/1.3050455

M3 - Article

SN - 0003-6951

VL - 93

SP - 241110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Investigation on the origin of terahertz waves generated by dc-biased multimode semiconductor lasers at room temperature

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Keywords

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