Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

G. Dinescu; A. Graaf, de; E. Aldea; M.C.M. Sanden, van de

doi:10.1088/0963-0252/10/3/316

Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

G. Dinescu, A. Graaf, de, E. Aldea, M.C.M. Sanden, van de

Plasma & Materials Processing

Research output: Contribution to journal › Article › Academic › peer-review

25 Citations (Scopus)

Abstract

The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.

Original language	English
Pages (from-to)	513-523
Journal	Plasma Sources Science and Technology
Volume	10
Issue number	3
DOIs	https://doi.org/10.1088/0963-0252/10/3/316
Publication status	Published - 2001

Access to Document

10.1088/0963-0252/10/3/316

Cite this

@article{5e952c0e33814f42b6fdb55745050fdc,

title = "Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma",

abstract = "The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.",

author = "G. Dinescu and \{Graaf, de\}, A. and E. Aldea and \{Sanden, van de\}, M.C.M.",

year = "2001",

doi = "10.1088/0963-0252/10/3/316",

language = "English",

volume = "10",

pages = "513--523",

journal = "Plasma Sources Science and Technology",

issn = "0963-0252",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

AU - Dinescu, G.

AU - Graaf, de, A.

AU - Aldea, E.

AU - Sanden, van de, M.C.M.

PY - 2001

Y1 - 2001

N2 - The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.

AB - The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.

U2 - 10.1088/0963-0252/10/3/316

DO - 10.1088/0963-0252/10/3/316

M3 - Article

SN - 0963-0252

VL - 10

SP - 513

EP - 523

JO - Plasma Sources Science and Technology

JF - Plasma Sources Science and Technology

IS - 3

ER -

Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

Abstract

Access to Document

Fingerprint

Cite this