Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

G. Dinescu, A. Graaf, de, E. Aldea, M.C.M. Sanden, van de

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19 Citations (Scopus)

Abstract

The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.
Original languageEnglish
Pages (from-to)513-523
JournalPlasma Sources Science and Technology
Volume10
Issue number3
DOIs
Publication statusPublished - 2001

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