Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

G. Dinescu; A. Graaf, de; E. Aldea; M.C.M. Sanden, van de

doi:10.1088/0963-0252/10/3/316

Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

G. Dinescu, A. Graaf, de, E. Aldea, M.C.M. Sanden, van de

Plasma & Materials Processing

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.

Original language	English
Pages (from-to)	513-523
Journal	Plasma Sources Science and Technology
Volume	10
Issue number	3
DOIs	https://doi.org/10.1088/0963-0252/10/3/316
Publication status	Published - 2001

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title = "Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma",

abstract = "The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.",

author = "G. Dinescu and {Graaf, de}, A. and E. Aldea and {Sanden, van de}, M.C.M.",

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AU - Dinescu, G.

AU - Graaf, de, A.

AU - Aldea, E.

AU - Sanden, van de, M.C.M.

PY - 2001

Y1 - 2001

N2 - The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.

AB - The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expanding thermal plasmas is investigated in order to unravel the role of plasma species in the fast deposition (up to 40 nm s-1) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined and the emission from the different plasmas is compared in order to distinguish possible mechanisms for species production and excitation.

U2 - 10.1088/0963-0252/10/3/316

DO - 10.1088/0963-0252/10/3/316

M3 - Article

SN - 0963-0252

VL - 10

SP - 513

EP - 523

JO - Plasma Sources Science and Technology

JF - Plasma Sources Science and Technology

IS - 3

ER -

Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

Abstract

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