Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments

F. Karouta; R. Ruscassie; M.C.J.C.M. Krämer; B. Jacobs; I. Moerman

Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments

F. Karouta, R. Ruscassie, M.C.J.C.M. Krämer, B. Jacobs, I. Moerman

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

P-contacts on MOVPE-grown Mg-doped GaN were investigated as function of various pretreatments in order to enhance the hole concentration of the starting material. After a Mgactivation at 950°C for 30 s in N2-ambient the samples show a typical hole concentration of ~1017 cm-3. In the investigations a metallisation of Ni-Au (20/100 nm) was mostly used which, after a thermal annealing, shows a slight Schottky behaviour. One of the pre-treatments induces a current increase at constant voltage of about 20%.

Original language	English
Title of host publication	Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
Editors	F. Berghmans, H. Thienpont, J. Danckaert, L. Desmet
Place of Publication	Brussels, Belgium
Publisher	IEEE/LEOS
Pages	73-77
ISBN (Print)	90-5487247-0
Publication status	Published - 2001
Event	6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, Belgium Duration: 3 Dec 2001 → 3 Dec 2001 Conference number: 6

Conference

Conference	6th Annual Symposium of the IEEE/LEOS Benelux Chapter
Country/Territory	Belgium
City	Brussels
Period	3/12/01 → 3/12/01

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Karouta, F., Ruscassie, R., Krämer, M. C. J. C. M., Jacobs, B., & Moerman, I. (2001). Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments. In F. Berghmans, H. Thienpont, J. Danckaert, & L. Desmet (Eds.), Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium (pp. 73-77). IEEE/LEOS.

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title = "Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments",

abstract = "P-contacts on MOVPE-grown Mg-doped GaN were investigated as function of various pretreatments in order to enhance the hole concentration of the starting material. After a Mgactivation at 950°C for 30 s in N2-ambient the samples show a typical hole concentration of \textasciitilde{}1017 cm-3. In the investigations a metallisation of Ni-Au (20/100 nm) was mostly used which, after a thermal annealing, shows a slight Schottky behaviour. One of the pre-treatments induces a current increase at constant voltage of about 20\%.",

author = "F. Karouta and R. Ruscassie and M.C.J.C.M. Kr{\"a}mer and B. Jacobs and I. Moerman",

year = "2001",

language = "English",

isbn = "90-5487247-0",

pages = "73--77",

editor = "F. Berghmans and H. Thienpont and J. Danckaert and L. Desmet",

booktitle = "Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium",

publisher = "IEEE/LEOS",

note = "6th Annual Symposium of the IEEE/LEOS Benelux Chapter ; Conference date: 03-12-2001 Through 03-12-2001",

}

Karouta, F, Ruscassie, R, Krämer, MCJCM, Jacobs, B & Moerman, I 2001, Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments. in F Berghmans, H Thienpont, J Danckaert & L Desmet (eds), Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. IEEE/LEOS, Brussels, Belgium, pp. 73-77, 6th Annual Symposium of the IEEE/LEOS Benelux Chapter, Brussels, Belgium, 3/12/01.

Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments. / Karouta, F.; Ruscassie, R.; Krämer, M.C.J.C.M. et al.
Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. ed. / F. Berghmans; H. Thienpont; J. Danckaert; L. Desmet. Brussels, Belgium: IEEE/LEOS, 2001. p. 73-77.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments

AU - Karouta, F.

AU - Ruscassie, R.

AU - Krämer, M.C.J.C.M.

AU - Jacobs, B.

AU - Moerman, I.

N1 - Conference code: 6

PY - 2001

Y1 - 2001

N2 - P-contacts on MOVPE-grown Mg-doped GaN were investigated as function of various pretreatments in order to enhance the hole concentration of the starting material. After a Mgactivation at 950°C for 30 s in N2-ambient the samples show a typical hole concentration of ~1017 cm-3. In the investigations a metallisation of Ni-Au (20/100 nm) was mostly used which, after a thermal annealing, shows a slight Schottky behaviour. One of the pre-treatments induces a current increase at constant voltage of about 20%.

AB - P-contacts on MOVPE-grown Mg-doped GaN were investigated as function of various pretreatments in order to enhance the hole concentration of the starting material. After a Mgactivation at 950°C for 30 s in N2-ambient the samples show a typical hole concentration of ~1017 cm-3. In the investigations a metallisation of Ni-Au (20/100 nm) was mostly used which, after a thermal annealing, shows a slight Schottky behaviour. One of the pre-treatments induces a current increase at constant voltage of about 20%.

M3 - Conference contribution

SN - 90-5487247-0

SP - 73

EP - 77

BT - Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium

A2 - Berghmans, F.

A2 - Thienpont, H.

A2 - Danckaert, J.

A2 - Desmet, L.

PB - IEEE/LEOS

CY - Brussels, Belgium

T2 - 6th Annual Symposium of the IEEE/LEOS Benelux Chapter

Y2 - 3 December 2001 through 3 December 2001

ER -

Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments

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