Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments

F. Karouta, R. Ruscassie, M.C.J.C.M. Krämer, B. Jacobs, I. Moerman

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

P-contacts on MOVPE-grown Mg-doped GaN were investigated as function of various pretreatments in order to enhance the hole concentration of the starting material. After a Mgactivation at 950°C for 30 s in N2-ambient the samples show a typical hole concentration of ~1017 cm-3. In the investigations a metallisation of Ni-Au (20/100 nm) was mostly used which, after a thermal annealing, shows a slight Schottky behaviour. One of the pre-treatments induces a current increase at constant voltage of about 20%.
Original languageEnglish
Title of host publicationProceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
EditorsF. Berghmans, H. Thienpont, J. Danckaert, L. Desmet
Place of PublicationBrussels, Belgium
PublisherIEEE/LEOS
Pages73-77
ISBN (Print)90-5487247-0
Publication statusPublished - 2001
Event6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, Belgium
Duration: 3 Dec 20013 Dec 2001
Conference number: 6

Conference

Conference6th Annual Symposium of the IEEE/LEOS Benelux Chapter
CountryBelgium
CityBrussels
Period3/12/013/12/01

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