Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition

E.A. Filatova, A. Mameli, A. J. M. Mackus, F. Roozeboom, W. M. M. Kessels, D. Hausmann, S. D. Elliott

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Downloads (Pure)


Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, Si0 2 and SiNx) used in electronics.

Original languageEnglish
Title of host publication2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-5386-5336-4
ISBN (Print)978-1-5386-5337-1
Publication statusPublished - 2018
Event2018 IEEE 18th International Conference on Nanotechnology - Cork, Ireland
Duration: 23 Jul 201826 Jul 2018


Conference2018 IEEE 18th International Conference on Nanotechnology

Cite this