Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition

E.A. Filatova, A. Mameli, A. J. M. Mackus, F. Roozeboom, W. M. M. Kessels, D. Hausmannd, S. D. Elliott

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, SiO 2 and SiN x ) used in electronics.
LanguageEnglish
Title of host publication2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-5386-5336-4
ISBN (Print)978-1-5386-5337-1
DOIs
StatePublished - 2018
Event2018 IEEE 18th International Conference on Nanotechnology - Cork, Ireland
Duration: 23 Jul 201826 Jul 2018

Conference

Conference2018 IEEE 18th International Conference on Nanotechnology
CountryIreland
CityCork
Period23/07/1826/07/18

Cite this

Filatova, E. A., Mameli, A., Mackus, A. J. M., Roozeboom, F., Kessels, W. M. M., Hausmannd, D., & Elliott, S. D. (2018). Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) [8626336] Piscataway: Institute of Electrical and Electronics Engineers. DOI: 10.1109/NANO.2018.8626336
Filatova, E.A. ; Mameli, A. ; Mackus, A. J. M. ; Roozeboom, F. ; Kessels, W. M. M. ; Hausmannd, D. ; Elliott, S. D./ Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). Piscataway : Institute of Electrical and Electronics Engineers, 2018.
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title = "Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition",
abstract = "Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, SiO 2 and SiN x ) used in electronics.",
author = "E.A. Filatova and A. Mameli and Mackus, {A. J. M.} and F. Roozeboom and Kessels, {W. M. M.} and D. Hausmannd and Elliott, {S. D.}",
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Filatova, EA, Mameli, A, Mackus, AJM, Roozeboom, F, Kessels, WMM, Hausmannd, D & Elliott, SD 2018, Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. in 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)., 8626336, Institute of Electrical and Electronics Engineers, Piscataway, 2018 IEEE 18th International Conference on Nanotechnology, Cork, Ireland, 23/07/18. DOI: 10.1109/NANO.2018.8626336

Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. / Filatova, E.A.; Mameli, A.; Mackus, A. J. M.; Roozeboom, F.; Kessels, W. M. M.; Hausmannd, D.; Elliott, S. D.

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). Piscataway : Institute of Electrical and Electronics Engineers, 2018. 8626336.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition

AU - Filatova,E.A.

AU - Mameli,A.

AU - Mackus,A. J. M.

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AU - Kessels,W. M. M.

AU - Hausmannd,D.

AU - Elliott,S. D.

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N2 - Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, SiO 2 and SiN x ) used in electronics.

AB - Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, SiO 2 and SiN x ) used in electronics.

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DO - 10.1109/NANO.2018.8626336

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SN - 978-1-5386-5337-1

BT - 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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Filatova EA, Mameli A, Mackus AJM, Roozeboom F, Kessels WMM, Hausmannd D et al. Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). Piscataway: Institute of Electrical and Electronics Engineers. 2018. 8626336. Available from, DOI: 10.1109/NANO.2018.8626336