Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition

E.A. Filatova; A. Mameli; A. J. M. Mackus; F. Roozeboom; W. M. M. Kessels; D. Hausmann; S. D. Elliott

doi:10.1109/NANO.2018.8626336

Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition

E.A. Filatova, A. Mameli, A. J. M. Mackus, F. Roozeboom, W. M. M. Kessels, D. Hausmann, S. D. Elliott

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, Si0 ₂ and SiNx) used in electronics.

Original language	English
Title of host publication	2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-1-5386-5336-4
ISBN (Print)	978-1-5386-5337-1
DOIs	https://doi.org/10.1109/NANO.2018.8626336
Publication status	Published - 2018
Event	2018 IEEE 18th International Conference on Nanotechnology - Cork, Ireland Duration: 23 Jul 2018 → 26 Jul 2018

Conference

Conference	2018 IEEE 18th International Conference on Nanotechnology
Country/Territory	Ireland
City	Cork
Period	23/07/18 → 26/07/18

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Filatova, E. A., Mameli, A., Mackus, A. J. M., Roozeboom, F., Kessels, W. M. M., Hausmann, D., & Elliott, S. D. (2018). Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) [8626336] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NANO.2018.8626336

@inproceedings{7edee8a2e8ad49febfd58f9b90a2b9c7,

title = "Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition",

abstract = "Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, Si0 2 and SiNx) used in electronics. ",

author = "E.A. Filatova and A. Mameli and Mackus, {A. J. M.} and F. Roozeboom and Kessels, {W. M. M.} and D. Hausmann and Elliott, {S. D.}",

year = "2018",

doi = "10.1109/NANO.2018.8626336",

language = "English",

isbn = "978-1-5386-5337-1",

booktitle = "2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2018 IEEE 18th International Conference on Nanotechnology ; Conference date: 23-07-2018 Through 26-07-2018",

}

Filatova, EA, Mameli, A, Mackus, AJM, Roozeboom, F, Kessels, WMM, Hausmann, D & Elliott, SD 2018, Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. in 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)., 8626336, Institute of Electrical and Electronics Engineers, Piscataway, 2018 IEEE 18th International Conference on Nanotechnology, Cork, Ireland, 23/07/18. https://doi.org/10.1109/NANO.2018.8626336

Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. / Filatova, E.A.; Mameli, A.; Mackus, A. J. M. et al.
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). Piscataway: Institute of Electrical and Electronics Engineers, 2018. 8626336.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition

AU - Filatova, E.A.

AU - Mameli, A.

AU - Mackus, A. J. M.

AU - Roozeboom, F.

AU - Kessels, W. M. M.

AU - Hausmann, D.

AU - Elliott, S. D.

PY - 2018

Y1 - 2018

N2 - Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, Si0 2 and SiNx) used in electronics.

AB - Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, Si0 2 and SiNx) used in electronics.

UR - http://www.scopus.com/inward/record.url?scp=85062290792&partnerID=8YFLogxK

U2 - 10.1109/NANO.2018.8626336

DO - 10.1109/NANO.2018.8626336

M3 - Conference contribution

SN - 978-1-5386-5337-1

BT - 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2018 IEEE 18th International Conference on Nanotechnology

Y2 - 23 July 2018 through 26 July 2018

ER -

Filatova EA, Mameli A, Mackus AJM, Roozeboom F, Kessels WMM, Hausmann D et al. Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). Piscataway: Institute of Electrical and Electronics Engineers. 2018. 8626336 doi: 10.1109/NANO.2018.8626336

Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition

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