Inverting and non-inverting operation of InP microdisc modulators

J. Hofrichter, T. Morf, Antonio La Porta, B.J. Offrein, P. Mechet, G. Morthier, T. Vries, de, H.J.S. Dorren, O. Raz

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Abstract

Reported is the inverting and non-inverting operation of indium phosphide (InP)-based microdisc modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non-inverting manner depending on the bias conditions. Static extinction ratios and dynamic operation of the device up to 2.5 Gbit/s are demonstrated. Clean open eyes with extinction ratios better than 6 dB are shown and operation with a bit error rate below 1 × 10-10 is demonstrated at 1.0 Gbit/s for both operation modes with a bias of only 1 Vpp.
Original languageEnglish
Pages (from-to)586-588
Number of pages2
JournalElectronics Letters
Volume48
Issue number10
DOIs
Publication statusPublished - 2012

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    Hofrichter, J., Morf, T., La Porta, A., Offrein, B. J., Mechet, P., Morthier, G., Vries, de, T., Dorren, H. J. S., & Raz, O. (2012). Inverting and non-inverting operation of InP microdisc modulators. Electronics Letters, 48(10), 586-588. https://doi.org/10.1049/el.2012.0684