Inverting and non-inverting operation of InP microdisc modulators

J. Hofrichter; T. Morf; Antonio La Porta; B.J. Offrein; P. Mechet; G. Morthier; T. Vries, de; H.J.S. Dorren; O. Raz

doi:10.1049/el.2012.0684

Inverting and non-inverting operation of InP microdisc modulators

J. Hofrichter, T. Morf, Antonio La Porta, B.J. Offrein, P. Mechet, G. Morthier, T. Vries, de, H.J.S. Dorren, O. Raz

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Abstract

Reported is the inverting and non-inverting operation of indium phosphide (InP)-based microdisc modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non-inverting manner depending on the bias conditions. Static extinction ratios and dynamic operation of the device up to 2.5 Gbit/s are demonstrated. Clean open eyes with extinction ratios better than 6 dB are shown and operation with a bit error rate below 1 × 10-10 is demonstrated at 1.0 Gbit/s for both operation modes with a bias of only 1 Vpp.

Original language	English
Pages (from-to)	586-588
Number of pages	2
Journal	Electronics Letters
Volume	48
Issue number	10
DOIs	https://doi.org/10.1049/el.2012.0684
Publication status	Published - 2012

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10.1049/el.2012.0684

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@article{df4171e1fea44d24bfd939907e041d24,

title = "Inverting and non-inverting operation of InP microdisc modulators",

abstract = "Reported is the inverting and non-inverting operation of indium phosphide (InP)-based microdisc modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non-inverting manner depending on the bias conditions. Static extinction ratios and dynamic operation of the device up to 2.5 Gbit/s are demonstrated. Clean open eyes with extinction ratios better than 6 dB are shown and operation with a bit error rate below 1 × 10-10 is demonstrated at 1.0 Gbit/s for both operation modes with a bias of only 1 Vpp.",

author = "J. Hofrichter and T. Morf and {La Porta}, Antonio and B.J. Offrein and P. Mechet and G. Morthier and {Vries, de}, T. and H.J.S. Dorren and O. Raz",

year = "2012",

doi = "10.1049/el.2012.0684",

language = "English",

volume = "48",

pages = "586--588",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Wiley",

number = "10",

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TY - JOUR

T1 - Inverting and non-inverting operation of InP microdisc modulators

AU - Hofrichter, J.

AU - Morf, T.

AU - La Porta, Antonio

AU - Offrein, B.J.

AU - Mechet, P.

AU - Morthier, G.

AU - Vries, de, T.

AU - Dorren, H.J.S.

AU - Raz, O.

PY - 2012

Y1 - 2012

N2 - Reported is the inverting and non-inverting operation of indium phosphide (InP)-based microdisc modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non-inverting manner depending on the bias conditions. Static extinction ratios and dynamic operation of the device up to 2.5 Gbit/s are demonstrated. Clean open eyes with extinction ratios better than 6 dB are shown and operation with a bit error rate below 1 × 10-10 is demonstrated at 1.0 Gbit/s for both operation modes with a bias of only 1 Vpp.

AB - Reported is the inverting and non-inverting operation of indium phosphide (InP)-based microdisc modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non-inverting manner depending on the bias conditions. Static extinction ratios and dynamic operation of the device up to 2.5 Gbit/s are demonstrated. Clean open eyes with extinction ratios better than 6 dB are shown and operation with a bit error rate below 1 × 10-10 is demonstrated at 1.0 Gbit/s for both operation modes with a bias of only 1 Vpp.

U2 - 10.1049/el.2012.0684

DO - 10.1049/el.2012.0684

M3 - Article

SN - 0013-5194

VL - 48

SP - 586

EP - 588

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Inverting and non-inverting operation of InP microdisc modulators

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