Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy

J.M. Ulloa Herrero; M. Bozkurt; P.M. Koenraad

doi:10.1016/j.ssc.2009.04.036

Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy

J.M. Ulloa Herrero, M. Bozkurt, P.M. Koenraad

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

Abstract

Cross-sectional Scanning Tunneling Microscopy (X-STM) is an ideal tool to study the structural properties of semiconductor nanostructures, such as InAs self-assembled quantum dots (QDs) and the properties of individual doping atoms at the atomic scale. The technique allows for a precise determination of the size, shape and composition of overgrown semiconductor nanostructures which can be part of a (complex) multilayer structure. In this paper we discuss our recent results on InAs QD structures that were capped by various methods in order to control their size and shape. We will show that the capping process does strongly affect the final QD structure and thus forms a very important step in the dot formation process. Recently people have started to investigate magnetically doped QDs. We have used our X-STM technique to study the incorporation of single Mn-impurities in InAs/GaAs QDs. © 2009 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	1410-1418
Journal	Solid State Communications
Volume	149
Issue number	35-36
DOIs	https://doi.org/10.1016/j.ssc.2009.04.036
Publication status	Published - 2009

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10.1016/j.ssc.2009.04.036

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title = "Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy",

abstract = "Cross-sectional Scanning Tunneling Microscopy (X-STM) is an ideal tool to study the structural properties of semiconductor nanostructures, such as InAs self-assembled quantum dots (QDs) and the properties of individual doping atoms at the atomic scale. The technique allows for a precise determination of the size, shape and composition of overgrown semiconductor nanostructures which can be part of a (complex) multilayer structure. In this paper we discuss our recent results on InAs QD structures that were capped by various methods in order to control their size and shape. We will show that the capping process does strongly affect the final QD structure and thus forms a very important step in the dot formation process. Recently people have started to investigate magnetically doped QDs. We have used our X-STM technique to study the incorporation of single Mn-impurities in InAs/GaAs QDs. {\textcopyright} 2009 Elsevier Ltd. All rights reserved.",

author = "{Ulloa Herrero}, J.M. and M. Bozkurt and P.M. Koenraad",

year = "2009",

doi = "10.1016/j.ssc.2009.04.036",

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T1 - Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy

AU - Ulloa Herrero, J.M.

AU - Bozkurt, M.

AU - Koenraad, P.M.

PY - 2009

Y1 - 2009

N2 - Cross-sectional Scanning Tunneling Microscopy (X-STM) is an ideal tool to study the structural properties of semiconductor nanostructures, such as InAs self-assembled quantum dots (QDs) and the properties of individual doping atoms at the atomic scale. The technique allows for a precise determination of the size, shape and composition of overgrown semiconductor nanostructures which can be part of a (complex) multilayer structure. In this paper we discuss our recent results on InAs QD structures that were capped by various methods in order to control their size and shape. We will show that the capping process does strongly affect the final QD structure and thus forms a very important step in the dot formation process. Recently people have started to investigate magnetically doped QDs. We have used our X-STM technique to study the incorporation of single Mn-impurities in InAs/GaAs QDs. © 2009 Elsevier Ltd. All rights reserved.

AB - Cross-sectional Scanning Tunneling Microscopy (X-STM) is an ideal tool to study the structural properties of semiconductor nanostructures, such as InAs self-assembled quantum dots (QDs) and the properties of individual doping atoms at the atomic scale. The technique allows for a precise determination of the size, shape and composition of overgrown semiconductor nanostructures which can be part of a (complex) multilayer structure. In this paper we discuss our recent results on InAs QD structures that were capped by various methods in order to control their size and shape. We will show that the capping process does strongly affect the final QD structure and thus forms a very important step in the dot formation process. Recently people have started to investigate magnetically doped QDs. We have used our X-STM technique to study the incorporation of single Mn-impurities in InAs/GaAs QDs. © 2009 Elsevier Ltd. All rights reserved.

U2 - 10.1016/j.ssc.2009.04.036

DO - 10.1016/j.ssc.2009.04.036

M3 - Article

SN - 0038-1098

VL - 149

SP - 1410

EP - 1418

JO - Solid State Communications

JF - Solid State Communications

IS - 35-36

ER -

Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy

Abstract

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