Internal photoemission-based photodetector on Si microring resonator

Aref Rasoulzadehzali; Mohammad Kazem Moravvej-Farshi; Gholamreza Abaeiani

doi:10.1364/OL.37.004925

Internal photoemission-based photodetector on Si microring resonator

Aref Rasoulzadehzali, Mohammad Kazem Moravvej-Farshi (Corresponding author), Gholamreza Abaeiani

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Abstract

We propose a photodetector (PD) based on the internal photoemission effect over a Schottky barrier on a CMOS-compatible Si microring resonator for 1.55 μm. To analyze the device, we model the microring waveguide partially covered by a metal/silicide nanolayer, using the Z-transform method. The proposed structure benefits from the resonant-cavity-enhanced (RCE) waveguide PDs enjoying high efficiency and wavelength selectivity. Simulations show that the maximum value of the bandwidth-efficiency product for the proposed structure is in the order of 10 GHz, which is much higher than those reported for other RCE-based PDs.

Original language	English
Pages (from-to)	4925-4927
Number of pages	3
Journal	Optics Letters
Volume	37
Issue number	23
DOIs	https://doi.org/10.1364/OL.37.004925
Publication status	Published - 2012
Externally published	Yes

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abstract = "We propose a photodetector (PD) based on the internal photoemission effect over a Schottky barrier on a CMOS-compatible Si microring resonator for 1.55 μm. To analyze the device, we model the microring waveguide partially covered by a metal/silicide nanolayer, using the Z-transform method. The proposed structure benefits from the resonant-cavity-enhanced (RCE) waveguide PDs enjoying high efficiency and wavelength selectivity. Simulations show that the maximum value of the bandwidth-efficiency product for the proposed structure is in the order of 10 GHz, which is much higher than those reported for other RCE-based PDs.",

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AU - Rasoulzadehzali, Aref

AU - Moravvej-Farshi, Mohammad Kazem

AU - Abaeiani, Gholamreza

PY - 2012

Y1 - 2012

N2 - We propose a photodetector (PD) based on the internal photoemission effect over a Schottky barrier on a CMOS-compatible Si microring resonator for 1.55 μm. To analyze the device, we model the microring waveguide partially covered by a metal/silicide nanolayer, using the Z-transform method. The proposed structure benefits from the resonant-cavity-enhanced (RCE) waveguide PDs enjoying high efficiency and wavelength selectivity. Simulations show that the maximum value of the bandwidth-efficiency product for the proposed structure is in the order of 10 GHz, which is much higher than those reported for other RCE-based PDs.

AB - We propose a photodetector (PD) based on the internal photoemission effect over a Schottky barrier on a CMOS-compatible Si microring resonator for 1.55 μm. To analyze the device, we model the microring waveguide partially covered by a metal/silicide nanolayer, using the Z-transform method. The proposed structure benefits from the resonant-cavity-enhanced (RCE) waveguide PDs enjoying high efficiency and wavelength selectivity. Simulations show that the maximum value of the bandwidth-efficiency product for the proposed structure is in the order of 10 GHz, which is much higher than those reported for other RCE-based PDs.

U2 - 10.1364/OL.37.004925

DO - 10.1364/OL.37.004925

M3 - Article

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VL - 37

SP - 4925

EP - 4927

JO - Optics Letters

JF - Optics Letters

IS - 23

ER -

Internal photoemission-based photodetector on Si microring resonator

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