We propose a photodetector (PD) based on the internal photoemission effect over a Schottky barrier on a CMOS-compatible Si microring resonator for 1.55 μm. To analyze the device, we model the microring waveguide partially covered by a metal/silicide nanolayer, using the Z-transform method. The proposed structure benefits from the resonant-cavity-enhanced (RCE) waveguide PDs enjoying high efficiency and wavelength selectivity. Simulations show that the maximum value of the bandwidth-efficiency product for the proposed structure is in the order of 10 GHz, which is much higher than those reported for other RCE-based PDs.
Rasoulzadehzali, A., Moravvej-Farshi, M. K., & Abaeiani, G. (2012). Internal photoemission-based photodetector on Si microring resonator. Optics Letters, 37(23), 4925-4927. https://doi.org/10.1364/OL.37.004925