The migration of ledges in a semicoherent a/ß interface is considered to participate in solid-state transformations driven by diffusion. The advance of the ledge and/or the progress of the transformation can require the climb of misfit dislocations both in the ledge and in its path. The creation or annihilation of vacancies required for the transformation and the legde advance is provided by a combination of three vacancy sources or sinks: (a) the net vacancy flux to/from the interface resulting from the difference in lattice plane shift (Kirkendall effect) within the two contacting phases, (b) the climb of misfit dislocations from the interface into the bulk of the a and ß phases, and (c) the climb of misorientation dislocations within the interface. Thus, the dynamic action of the interface during the phase transformation would include: (i) climb of misfit dislocations out of the interface, with ensuing dissociation into glissile dislocations which resupply the interface by return glide, and (ii) climb of misorientation dislocations in the interface necessitating a continuing arrival of such dislocations from sources in the bulk or in the interface.
Pieraggi, B., Rapp, R. A., Loo, van, F. J. J., & Hirth, J. P. (1990). Interfacial dynamics in diffusion-driven phase transformations. Acta Metallurgica et Materialia, 38(9), 1781-1788. https://doi.org/10.1016/0956-7151(90)90020-H