Interface study on heterostructured GaP-GaAs nanowires

M.T. Borgström, M.A. Verheijen, W.G.G. Immink, T. Smet, de, E.P.A.M. Bakkers

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The interface chemical composition of heterostructured GaP-GaAs nanowire segments was studied by the use of energy-dispersive x-ray analysis. An arsenic-rich tail in the GaP segments following GaAs could be minimized by reducing the AsH3 molar fraction and the growth rate. For the temperature regime used for vapour-liquid-solid growth, we observe the opposite trend on interface sharpness compared to high-temperature layer-by-layer growth, that is, the sharpness of the interface improves with reducing temperature.
Original languageEnglish
Pages (from-to)4010-4013
Number of pages4
JournalNanotechnology
Volume17
Issue number16
DOIs
Publication statusPublished - 2006

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Nanowires
Arsenic
Temperature
Vapors
X rays
Liquids
Chemical analysis
gallium arsenide
arsine

Cite this

Borgström, M.T. ; Verheijen, M.A. ; Immink, W.G.G. ; Smet, de, T. ; Bakkers, E.P.A.M. / Interface study on heterostructured GaP-GaAs nanowires. In: Nanotechnology. 2006 ; Vol. 17, No. 16. pp. 4010-4013.
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Interface study on heterostructured GaP-GaAs nanowires. / Borgström, M.T.; Verheijen, M.A.; Immink, W.G.G.; Smet, de, T.; Bakkers, E.P.A.M.

In: Nanotechnology, Vol. 17, No. 16, 2006, p. 4010-4013.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Borgström, M.T.

AU - Verheijen, M.A.

AU - Immink, W.G.G.

AU - Smet, de, T.

AU - Bakkers, E.P.A.M.

PY - 2006

Y1 - 2006

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AB - The interface chemical composition of heterostructured GaP-GaAs nanowire segments was studied by the use of energy-dispersive x-ray analysis. An arsenic-rich tail in the GaP segments following GaAs could be minimized by reducing the AsH3 molar fraction and the growth rate. For the temperature regime used for vapour-liquid-solid growth, we observe the opposite trend on interface sharpness compared to high-temperature layer-by-layer growth, that is, the sharpness of the interface improves with reducing temperature.

U2 - 10.1088/0957-4484/17/16/002

DO - 10.1088/0957-4484/17/16/002

M3 - Article

C2 - 21727529

VL - 17

SP - 4010

EP - 4013

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

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