The interface chemical composition of heterostructured GaP-GaAs nanowire segments was studied by the use of energy-dispersive x-ray analysis. An arsenic-rich tail in the GaP segments following GaAs could be minimized by reducing the AsH3 molar fraction and the growth rate. For the temperature regime used for vapour-liquid-solid growth, we observe the opposite trend on interface sharpness compared to high-temperature layer-by-layer growth, that is, the sharpness of the interface improves with reducing temperature.
Borgström, M. T., Verheijen, M. A., Immink, W. G. G., Smet, de, T., & Bakkers, E. P. A. M. (2006). Interface study on heterostructured GaP-GaAs nanowires. Nanotechnology, 17(16), 4010-4013. https://doi.org/10.1088/0957-4484/17/16/002