Interface study on heterostructured GaP-GaAs nanowires

M.T. Borgström, M.A. Verheijen, W.G.G. Immink, T. Smet, de, E.P.A.M. Bakkers

Research output: Contribution to journalArticleAcademicpeer-review

51 Citations (Scopus)


The interface chemical composition of heterostructured GaP-GaAs nanowire segments was studied by the use of energy-dispersive x-ray analysis. An arsenic-rich tail in the GaP segments following GaAs could be minimized by reducing the AsH3 molar fraction and the growth rate. For the temperature regime used for vapour-liquid-solid growth, we observe the opposite trend on interface sharpness compared to high-temperature layer-by-layer growth, that is, the sharpness of the interface improves with reducing temperature.
Original languageEnglish
Pages (from-to)4010-4013
Number of pages4
Issue number16
Publication statusPublished - 2006


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