Interface roughness in strained Si/SiGe multilayers

A.A. Darhuber; V. Holy; J. Stangl; G. Bauer; G. Abstreiter

doi:10.1557/PROC-448-153

Interface roughness in strained Si/SiGe multilayers

A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, G. Abstreiter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

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Abstract

Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OO I) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA). we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

Original language	English
Title of host publication	Control of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.
Editors	S.M. Prokes
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	153-158
ISBN (Print)	9781558993525
DOIs	https://doi.org/10.1557/PROC-448-153
Publication status	Published - 1997

Publication series

Name	Materials Research Society symposium proceedings
Volume	448
ISSN (Print)	0272-9172

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10.1557/PROC-448-153

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Darhuber, A. A., Holy, V., Stangl, J., Bauer, G., & Abstreiter, G. (1997). Interface roughness in strained Si/SiGe multilayers. In S. M. Prokes (Ed.), Control of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (pp. 153-158). (Materials Research Society symposium proceedings; Vol. 448). Materials Research Society. https://doi.org/10.1557/PROC-448-153

@inproceedings{172ad2313d854025a96895efba4d9490,

title = "Interface roughness in strained Si/SiGe multilayers",

abstract = "Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OO I) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA). we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.",

author = "A.A. Darhuber and V. Holy and J. Stangl and G. Bauer and G. Abstreiter",

year = "1997",

doi = "10.1557/PROC-448-153",

language = "English",

isbn = "9781558993525",

series = "Materials Research Society symposium proceedings",

publisher = "Materials Research Society",

pages = "153--158",

editor = "S.M. Prokes",

booktitle = "Control of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.",

address = "United States",

}

Darhuber, AA, Holy, V, Stangl, J, Bauer, G & Abstreiter, G 1997, Interface roughness in strained Si/SiGe multilayers. in SM Prokes (ed.), Control of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. Materials Research Society symposium proceedings, vol. 448, Materials Research Society, Warrendale, pp. 153-158. https://doi.org/10.1557/PROC-448-153

Interface roughness in strained Si/SiGe multilayers. / Darhuber, A.A.; Holy, V.; Stangl, J. et al.
Control of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. ed. / S.M. Prokes. Warrendale: Materials Research Society, 1997. p. 153-158 (Materials Research Society symposium proceedings; Vol. 448).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Interface roughness in strained Si/SiGe multilayers

AU - Darhuber, A.A.

AU - Holy, V.

AU - Stangl, J.

AU - Bauer, G.

AU - Abstreiter, G.

PY - 1997

Y1 - 1997

N2 - Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OO I) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA). we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

AB - Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OO I) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA). we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

U2 - 10.1557/PROC-448-153

DO - 10.1557/PROC-448-153

M3 - Conference contribution

SN - 9781558993525

T3 - Materials Research Society symposium proceedings

SP - 153

EP - 158

BT - Control of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.

A2 - Prokes, S.M.

PB - Materials Research Society

CY - Warrendale

ER -

Darhuber AA, Holy V, Stangl J, Bauer G, Abstreiter G. Interface roughness in strained Si/SiGe multilayers. In Prokes SM, editor, Control of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. Warrendale: Materials Research Society. 1997. p. 153-158. (Materials Research Society symposium proceedings). doi: 10.1557/PROC-448-153

Interface roughness in strained Si/SiGe multilayers

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