Interface roughness in strained Si/SiGe multilayers

A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, G. Abstreiter

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    2 Downloads (Pure)

    Abstract

    Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OO I) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA). we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.
    Original languageEnglish
    Title of host publicationControl of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.
    EditorsS.M. Prokes
    Place of PublicationWarrendale
    PublisherMaterials Research Society
    Pages153-158
    ISBN (Print)9781558993525
    DOIs
    Publication statusPublished - 1997

    Publication series

    NameMaterials Research Society symposium proceedings
    Volume448
    ISSN (Print)0272-9172

    Fingerprint

    Dive into the research topics of 'Interface roughness in strained Si/SiGe multilayers'. Together they form a unique fingerprint.

    Cite this