Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits

G. Roelkens, J. Brouckaert, D. Taillaert, P. Dumon, W. Bogaerts, D. Thourhout, Van, R.G.F. Baets, R. Nötzel, M.K. Smit

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Abstract

The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semiconductors. We present the technology for heterogeneous integration of III-V semiconductor optical components and SOI passive optical components using benzocyclobutene (BCB) die to wafer bonding. InP/InGaAsP photodetectors on SOI waveguide circuits were fabricated. The developed process is compatible with the fabrication of InP/InGaAsP light emitters on SOI.
Original languageEnglish
Pages (from-to)10102-10108
JournalOptics Express
Volume13
Issue number25
DOIs
Publication statusPublished - 2005

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