InSb nanowires with built-in GaxIn1-xSb tunnel barriers for Majorana devices

D. Car, S. Conesa Boj, H. Zhang, R. Op het Veld, M.W.A. de Moor, Elham Fadaly, Ö. Gül, S. Kölling, M.-F. Plissard, V. Toresen, M. Wimmer, K. Watanabe, T. Taniguchi, L.P. Kouwenhoven, E.P.A.M. Bakkers

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Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1–xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1–xSb tunnel barrier are extracted from the Wentzel–Kramers-Brillouin (WKB) fits to the experimental I–V traces.
Original languageEnglish
Pages (from-to)721–727
Number of pages7
JournalNano Letters
Issue number2
Early online date17 Nov 2016
Publication statusPublished - 8 Feb 2017


  • Semiconductor nanowire
  • axial heterostructure
  • band engineering
  • indium antimonide
  • strain mapping
  • tunnel barrier


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