InP/InGaAs photodetector on SOI circuitry

P.R.A. Binetti; X.J.M. Leijtens; T. Vries, de; Y.S. Oei; L. Di Cioccio; J.-M. Fédéli; C. Lagahe; J. Van Campenhout; D. Thourhout, Van; P.J. Veldhoven, van; R. Nötzel; M.K. Smit

doi:10.1109/GROUP4.2009.5338390

InP/InGaAs photodetector on SOI circuitry

P.R.A. Binetti, X.J.M. Leijtens, T. Vries, de, Y.S. Oei, L. Di Cioccio, J.-M. Fédéli, C. Lagahe, J. Van Campenhout, D. Thourhout, Van, P.J. Veldhoven, van, R. Nötzel, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

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Abstract

We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

Original language	English
Title of host publication	Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	214-216
ISBN (Print)	978-1-4244-4403-8
DOIs	https://doi.org/10.1109/GROUP4.2009.5338390
Publication status	Published - 2009

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10.1109/GROUP4.2009.5338390

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Binetti, P. R. A., Leijtens, X. J. M., Vries, de, T., Oei, Y. S., Di Cioccio, L., Fédéli, J.-M., Lagahe, C., Van Campenhout, J., Thourhout, Van, D., Veldhoven, van, P. J., Nötzel, R., & Smit, M. K. (2009). InP/InGaAs photodetector on SOI circuitry. In Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California (pp. 214-216). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/GROUP4.2009.5338390

@inproceedings{e1b4439a79b14d96a47a0b47e54686ef,

title = "InP/InGaAs photodetector on SOI circuitry",

abstract = "We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.",

author = "P.R.A. Binetti and X.J.M. Leijtens and {Vries, de}, T. and Y.S. Oei and {Di Cioccio}, L. and J.-M. F{\'e}d{\'e}li and C. Lagahe and {Van Campenhout}, J. and {Thourhout, Van}, D. and {Veldhoven, van}, P.J. and R. N{\"o}tzel and M.K. Smit",

year = "2009",

doi = "10.1109/GROUP4.2009.5338390",

language = "English",

isbn = "978-1-4244-4403-8",

pages = "214--216",

booktitle = "Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Binetti, PRA, Leijtens, XJM, Vries, de, T, Oei, YS, Di Cioccio, L, Fédéli, J-M, Lagahe, C, Van Campenhout, J, Thourhout, Van, D, Veldhoven, van, PJ, Nötzel, R & Smit, MK 2009, InP/InGaAs photodetector on SOI circuitry. in Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California. Institute of Electrical and Electronics Engineers, Piscataway, pp. 214-216. https://doi.org/10.1109/GROUP4.2009.5338390

InP/InGaAs photodetector on SOI circuitry. / Binetti, P.R.A.; Leijtens, X.J.M.; Vries, de, T. et al.
Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California. Piscataway: Institute of Electrical and Electronics Engineers, 2009. p. 214-216.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - InP/InGaAs photodetector on SOI circuitry

AU - Binetti, P.R.A.

AU - Leijtens, X.J.M.

AU - Vries, de, T.

AU - Oei, Y.S.

AU - Di Cioccio, L.

AU - Fédéli, J.-M.

AU - Lagahe, C.

AU - Van Campenhout, J.

AU - Thourhout, Van, D.

AU - Veldhoven, van, P.J.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2009

Y1 - 2009

N2 - We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

AB - We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

U2 - 10.1109/GROUP4.2009.5338390

DO - 10.1109/GROUP4.2009.5338390

M3 - Conference contribution

SN - 978-1-4244-4403-8

SP - 214

EP - 216

BT - Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Binetti PRA, Leijtens XJM, Vries, de T, Oei YS, Di Cioccio L, Fédéli JM et al. InP/InGaAs photodetector on SOI circuitry. In Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. 214-216 doi: 10.1109/GROUP4.2009.5338390

InP/InGaAs photodetector on SOI circuitry

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