InP photonic integrated circuits on silicon

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IMOS (InP membrane on silicon) is a platform-based approach to create indium phosphide (InP) nanophotonic integrated circuits. It uses monolithic integration of all photonic functions in the InP layers to leverage the most efficient optoelectronic processes and to remove optical interfaces between separately grown wafers. Using an optoelectronic material for the photonic components provides a powerful route to nanoscale miniaturization and circuit-level performance enhancements. In this chapter, we review the progress in the passive and active InP building blocks and highlight routes to miniaturization and performance scaling. We address the interfaces between building blocks, which are critical to a powerful platform approach. The platform approach enables customization by designers to create new components and circuits. The process design kit methodology is applied to provide a route to circuit design abstraction.

Translated title of the contributionFotonisch geintegreerde InP-circuits op silicium
Original languageEnglish
Title of host publicationSilicon Photonics
EditorsSebastian Lourdudoss, Ray T. Chen, Chennupati Jagadish
Number of pages31
ISBN (Electronic)9780128155196
ISBN (Print)9780128150993
Publication statusPublished - 14 Sep 2018

Publication series

NameSemiconductors and Semimetals
ISSN (Print)0080-8784


  • Active–passive integration
  • Coupling
  • Demultiplexer
  • Laser
  • Membrane
  • Modulator
  • Photodetector
  • Photonic integration
  • Polarization
  • Waveguide


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