InP nanowire solar cell with high open circuit voltage and high fill factor

Y. Cui; J. Wang; S.R. Plissard; M. Trainor; T.T.T. Vu; H.I.T. Hauge; J.E.M. Haverkort; E.P.A.M. Bakkers

InP nanowire solar cell with high open circuit voltage and high fill factor

Y. Cui, J. Wang, S.R. Plissard, M. Trainor, T.T.T. Vu, H.I.T. Hauge, J.E.M. Haverkort, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We demonstrate an InP axial pn-junction nanowire solar cell array with 107 diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.

Original language	English
Title of host publication	Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2012
Publisher	Elsevier
Number of pages	2
ISBN (Print)	9781557529527
Publication status	Published - 1 Dec 2012
Event	Optical Nanostructures and Advanced Materials for Photovoltaics, (PV2012) - Eindhoven, Netherlands Duration: 11 Nov 2012 → 14 Nov 2012

Conference

Conference	Optical Nanostructures and Advanced Materials for Photovoltaics, (PV2012)
Abbreviated title	PV2012
Country/Territory	Netherlands
City	Eindhoven
Period	11/11/12 → 14/11/12

Cite this

@inproceedings{99eb40dbef324066ba146a66c64d9449,

title = "InP nanowire solar cell with high open circuit voltage and high fill factor",

abstract = "We demonstrate an InP axial pn-junction nanowire solar cell array with 107 diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.",

author = "Y. Cui and J. Wang and S.R. Plissard and M. Trainor and T.T.T. Vu and H.I.T. Hauge and J.E.M. Haverkort and E.P.A.M. Bakkers",

year = "2012",

month = dec,

day = "1",

language = "English",

isbn = "9781557529527",

booktitle = "Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2012",

publisher = "Elsevier",

address = "Netherlands",

note = "Optical Nanostructures and Advanced Materials for Photovoltaics, (PV2012), PV2012 ; Conference date: 11-11-2012 Through 14-11-2012",

}

Cui, Y, Wang, J, Plissard, SR, Trainor, M, Vu, TTT, Hauge, HIT, Haverkort, JEM & Bakkers, EPAM 2012, InP nanowire solar cell with high open circuit voltage and high fill factor. in Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2012., JT5A.1, Elsevier, Optical Nanostructures and Advanced Materials for Photovoltaics, (PV2012), Eindhoven, Netherlands, 11/11/12.

TY - GEN

T1 - InP nanowire solar cell with high open circuit voltage and high fill factor

AU - Cui, Y.

AU - Wang, J.

AU - Plissard, S.R.

AU - Trainor, M.

AU - Vu, T.T.T.

AU - Hauge, H.I.T.

AU - Haverkort, J.E.M.

AU - Bakkers, E.P.A.M.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - We demonstrate an InP axial pn-junction nanowire solar cell array with 107 diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.

AB - We demonstrate an InP axial pn-junction nanowire solar cell array with 107 diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.

UR - http://www.scopus.com/inward/record.url?scp=84893455055&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781557529527

BT - Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2012

PB - Elsevier

T2 - Optical Nanostructures and Advanced Materials for Photovoltaics, (PV2012)

Y2 - 11 November 2012 through 14 November 2012

ER -

InP nanowire solar cell with high open circuit voltage and high fill factor

Abstract

Conference

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