InP nanowire solar cell with high open circuit voltage and high fill factor

Y. Cui, J. Wang, S.R. Plissard, M. Trainor, T.T.T. Vu, H.I.T. Hauge, J.E.M. Haverkort, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We demonstrate an InP axial pn-junction nanowire solar cell array with 107 diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.

Original languageEnglish
Title of host publicationOptical Nanostructures and Advanced Materials for Photovoltaics, PV 2012
PublisherElsevier
Number of pages2
ISBN (Print)9781557529527
Publication statusPublished - 1 Dec 2012
EventOptical Nanostructures and Advanced Materials for Photovoltaics, (PV2012) - Eindhoven, Netherlands
Duration: 11 Nov 201214 Nov 2012

Conference

ConferenceOptical Nanostructures and Advanced Materials for Photovoltaics, (PV2012)
Abbreviated titlePV2012
CountryNetherlands
CityEindhoven
Period11/11/1214/11/12

Fingerprint Dive into the research topics of 'InP nanowire solar cell with high open circuit voltage and high fill factor'. Together they form a unique fingerprint.

  • Cite this

    Cui, Y., Wang, J., Plissard, S. R., Trainor, M., Vu, T. T. T., Hauge, H. I. T., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2012). InP nanowire solar cell with high open circuit voltage and high fill factor. In Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2012 [JT5A.1] Elsevier.