InP MEMS Mach-Zehnder interferometer optical switch on silicon

Tianran Liu; Francesco Pagliano; René van Veldhoven; Vadim Pogoretskii; Yuqing Jiao; Andrea Fiore

doi:10.1109/CLEOE-EQEC.2019.8872336

InP MEMS Mach-Zehnder interferometer optical switch on silicon

Tianran Liu
, Francesco Pagliano
, René van Veldhoven
, Vadim Pogoretskii
, Yuqing Jiao
, Andrea Fiore

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In recent years, several on-chip MEMS switches on silicon photonics have been reported [1, 2]. These switches require tens of volts for the actuation, which is challenging for their application in photonic integrated circuits. In this abstract we present an on-chip MEMS Mach-Zehnder Interferometer, which presents a switching voltage of 4.4V with an extinction ratio above 15dB within a bandwidth of 34nm in the C-band. While the design can be implemented on different platforms as well, we use a InP membrane on a silicon substrate by an adhesive bonding technique [3], which provides the possibility to integrate our device with active components (amplifiers, lasers, detectors) on a single chip.

Original language	English
Title of host publication	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	1
ISBN (Electronic)	978-1-7281-0469-0
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2019.8872336
Publication status	Published - 1 Jun 2019
Event	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 - Munich, Germany Duration: 23 Jun 2019 → 27 Jun 2019

Conference

Conference	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Country/Territory	Germany
City	Munich
Period	23/06/19 → 27/06/19

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10.1109/CLEOE-EQEC.2019.8872336

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Liu, T., Pagliano, F., van Veldhoven, R., Pogoretskii, V., Jiao, Y., & Fiore, A. (2019). InP MEMS Mach-Zehnder interferometer optical switch on silicon. In 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 Article 8872336 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/CLEOE-EQEC.2019.8872336

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title = "InP MEMS Mach-Zehnder interferometer optical switch on silicon",

abstract = "In recent years, several on-chip MEMS switches on silicon photonics have been reported [1, 2]. These switches require tens of volts for the actuation, which is challenging for their application in photonic integrated circuits. In this abstract we present an on-chip MEMS Mach-Zehnder Interferometer, which presents a switching voltage of 4.4V with an extinction ratio above 15dB within a bandwidth of 34nm in the C-band. While the design can be implemented on different platforms as well, we use a InP membrane on a silicon substrate by an adhesive bonding technique [3], which provides the possibility to integrate our device with active components (amplifiers, lasers, detectors) on a single chip.",

author = "Tianran Liu and Francesco Pagliano and \{van Veldhoven\}, Ren{\'e} and Vadim Pogoretskii and Yuqing Jiao and Andrea Fiore",

year = "2019",

month = jun,

day = "1",

doi = "10.1109/CLEOE-EQEC.2019.8872336",

language = "English",

booktitle = "2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 ; Conference date: 23-06-2019 Through 27-06-2019",

}

Liu, T, Pagliano, F, van Veldhoven, R, Pogoretskii, V, Jiao, Y & Fiore, A 2019, InP MEMS Mach-Zehnder interferometer optical switch on silicon. in 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019., 8872336, Institute of Electrical and Electronics Engineers, Piscataway, 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, Munich, Germany, 23/06/19. https://doi.org/10.1109/CLEOE-EQEC.2019.8872336

InP MEMS Mach-Zehnder interferometer optical switch on silicon. / Liu, Tianran; Pagliano, Francesco; van Veldhoven, René et al.
2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Piscataway: Institute of Electrical and Electronics Engineers, 2019. 8872336.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - InP MEMS Mach-Zehnder interferometer optical switch on silicon

AU - Liu, Tianran

AU - Pagliano, Francesco

AU - van Veldhoven, René

AU - Pogoretskii, Vadim

AU - Jiao, Yuqing

AU - Fiore, Andrea

PY - 2019/6/1

Y1 - 2019/6/1

N2 - In recent years, several on-chip MEMS switches on silicon photonics have been reported [1, 2]. These switches require tens of volts for the actuation, which is challenging for their application in photonic integrated circuits. In this abstract we present an on-chip MEMS Mach-Zehnder Interferometer, which presents a switching voltage of 4.4V with an extinction ratio above 15dB within a bandwidth of 34nm in the C-band. While the design can be implemented on different platforms as well, we use a InP membrane on a silicon substrate by an adhesive bonding technique [3], which provides the possibility to integrate our device with active components (amplifiers, lasers, detectors) on a single chip.

AB - In recent years, several on-chip MEMS switches on silicon photonics have been reported [1, 2]. These switches require tens of volts for the actuation, which is challenging for their application in photonic integrated circuits. In this abstract we present an on-chip MEMS Mach-Zehnder Interferometer, which presents a switching voltage of 4.4V with an extinction ratio above 15dB within a bandwidth of 34nm in the C-band. While the design can be implemented on different platforms as well, we use a InP membrane on a silicon substrate by an adhesive bonding technique [3], which provides the possibility to integrate our device with active components (amplifiers, lasers, detectors) on a single chip.

UR - https://www.scopus.com/pages/publications/85074662941

U2 - 10.1109/CLEOE-EQEC.2019.8872336

DO - 10.1109/CLEOE-EQEC.2019.8872336

M3 - Conference contribution

BT - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

Y2 - 23 June 2019 through 27 June 2019

ER -

InP MEMS Mach-Zehnder interferometer optical switch on silicon

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