InP-based ridge lasers with lateral n-contacts

M. Nikoufard; J.H. Besten, den; M.J.R. Heck; Y.C. Zhu; E. Smalbrugge; T. Vries, de; P.J. Veldhoven, van; X.J.M. Leijtens; Y.S. Oei; R. Nötzel; M.K. Smit

InP-based ridge lasers with lateral n-contacts

M. Nikoufard, J.H. Besten, den, M.J.R. Heck, Y.C. Zhu, E. Smalbrugge, T. Vries, de, P.J. Veldhoven, van, X.J.M. Leijtens, Y.S. Oei, R. Nötzel, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

High-speed devices such as modulators and photodetectors on InP require the use of a semi-insulating substrate. Monolithically integrated lasers on semi-insulating substrates have to be provided with lateral n-contacts for current injection. In order to compare the performance of lateral n-contact with conventional back-side n-contacts, we fabricated ridge lasers on n-substrate that were provided with both lateral and backside n-contacts. In this article the performance of both types of contacts is compared.

Original language	English
Title of host publication	Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium
Editors	P. Mégret, M. Wuilpart, S. Bette, N. Staquet
Place of Publication	Mons
Publisher	IEEE/LEOS
Pages	261-264
ISBN (Print)	2-9600226-4-5
Publication status	Published - 2005
Event	10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, Belgium Duration: 1 Dec 2005 → 2 Dec 2005

Conference

Conference	10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium
Country/Territory	Belgium
City	Mons
Period	1/12/05 → 2/12/05

Cite this

Nikoufard, M., Besten, den, J. H., Heck, M. J. R., Zhu, Y. C., Smalbrugge, E., Vries, de, T., Veldhoven, van, P. J., Leijtens, X. J. M., Oei, Y. S., Nötzel, R., & Smit, M. K. (2005). InP-based ridge lasers with lateral n-contacts. In P. Mégret, M. Wuilpart, S. Bette, & N. Staquet (Eds.), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium (pp. 261-264). IEEE/LEOS.

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title = "InP-based ridge lasers with lateral n-contacts",

abstract = "High-speed devices such as modulators and photodetectors on InP require the use of a semi-insulating substrate. Monolithically integrated lasers on semi-insulating substrates have to be provided with lateral n-contacts for current injection. In order to compare the performance of lateral n-contact with conventional back-side n-contacts, we fabricated ridge lasers on n-substrate that were provided with both lateral and backside n-contacts. In this article the performance of both types of contacts is compared.",

author = "M. Nikoufard and {Besten, den}, J.H. and M.J.R. Heck and Y.C. Zhu and E. Smalbrugge and {Vries, de}, T. and {Veldhoven, van}, P.J. and X.J.M. Leijtens and Y.S. Oei and R. N{\"o}tzel and M.K. Smit",

year = "2005",

language = "English",

isbn = "2-9600226-4-5",

pages = "261--264",

editor = "P. M{\'e}gret and M. Wuilpart and S. Bette and N. Staquet",

booktitle = "Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium",

publisher = "IEEE/LEOS",

note = "10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium ; Conference date: 01-12-2005 Through 02-12-2005",

}

Nikoufard, M, Besten, den, JH, Heck, MJR, Zhu, YC, Smalbrugge, E, Vries, de, T, Veldhoven, van, PJ, Leijtens, XJM, Oei, YS, Nötzel, R & Smit, MK 2005, InP-based ridge lasers with lateral n-contacts. in P Mégret, M Wuilpart, S Bette & N Staquet (eds), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. IEEE/LEOS, Mons, pp. 261-264, 10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium, Mons, Belgium, 1/12/05.

InP-based ridge lasers with lateral n-contacts. / Nikoufard, M.; Besten, den, J.H.; Heck, M.J.R. et al.
Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. ed. / P. Mégret; M. Wuilpart; S. Bette; N. Staquet. Mons: IEEE/LEOS, 2005. p. 261-264.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - InP-based ridge lasers with lateral n-contacts

AU - Nikoufard, M.

AU - Besten, den, J.H.

AU - Heck, M.J.R.

AU - Zhu, Y.C.

AU - Smalbrugge, E.

AU - Vries, de, T.

AU - Veldhoven, van, P.J.

AU - Leijtens, X.J.M.

AU - Oei, Y.S.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2005

Y1 - 2005

N2 - High-speed devices such as modulators and photodetectors on InP require the use of a semi-insulating substrate. Monolithically integrated lasers on semi-insulating substrates have to be provided with lateral n-contacts for current injection. In order to compare the performance of lateral n-contact with conventional back-side n-contacts, we fabricated ridge lasers on n-substrate that were provided with both lateral and backside n-contacts. In this article the performance of both types of contacts is compared.

AB - High-speed devices such as modulators and photodetectors on InP require the use of a semi-insulating substrate. Monolithically integrated lasers on semi-insulating substrates have to be provided with lateral n-contacts for current injection. In order to compare the performance of lateral n-contact with conventional back-side n-contacts, we fabricated ridge lasers on n-substrate that were provided with both lateral and backside n-contacts. In this article the performance of both types of contacts is compared.

M3 - Conference contribution

SN - 2-9600226-4-5

SP - 261

EP - 264

BT - Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium

A2 - Mégret, P.

A2 - Wuilpart, M.

A2 - Bette, S.

A2 - Staquet, N.

PB - IEEE/LEOS

CY - Mons

T2 - 10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium

Y2 - 1 December 2005 through 2 December 2005

ER -

InP-based ridge lasers with lateral n-contacts

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