InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

P.R.A. Binetti, X.J.M. Leijtens, A. Morant Ripoll, T. Vries, de, E. Smalbrugge, Y.S. Oei, L. Di Cioccio, J.-M. Fédéli, C. Lagahe, R. Orobtchouk, D. Thourhout, Van, P.J. Veldhoven, van, R. Nötzel, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.
Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
PagesTuB2-139/140
ISBN (Print)978-1-4244-3680-4
DOIs
Publication statusPublished - 2009
Event22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009) - Antalya, Turkey
Duration: 4 Oct 20098 Oct 2009
Conference number: 22

Conference

Conference22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009)
Abbreviated titleLEOS 2009
CountryTurkey
CityAntalya
Period4/10/098/10/09

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photometers
CMOS
wafers
waveguides
wiring
compatibility
photonics
fabrication
detectors
electronics

Cite this

Binetti, P. R. A., Leijtens, X. J. M., Morant Ripoll, A., Vries, de, T., Smalbrugge, E., Oei, Y. S., ... Smit, M. K. (2009). InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. In Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya (pp. TuB2-139/140). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/LEOS.2009.5343085
Binetti, P.R.A. ; Leijtens, X.J.M. ; Morant Ripoll, A. ; Vries, de, T. ; Smalbrugge, E. ; Oei, Y.S. ; Di Cioccio, L. ; Fédéli, J.-M. ; Lagahe, C. ; Orobtchouk, R. ; Thourhout, Van, D. ; Veldhoven, van, P.J. ; Nötzel, R. ; Smit, M.K. / InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Piscataway : Institute of Electrical and Electronics Engineers, 2009. pp. TuB2-139/140
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title = "InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides",
abstract = "We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. {\circledC} 2009 IEEE.",
author = "P.R.A. Binetti and X.J.M. Leijtens and {Morant Ripoll}, A. and {Vries, de}, T. and E. Smalbrugge and Y.S. Oei and {Di Cioccio}, L. and J.-M. F{\'e}d{\'e}li and C. Lagahe and R. Orobtchouk and {Thourhout, Van}, D. and {Veldhoven, van}, P.J. and R. N{\"o}tzel and M.K. Smit",
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language = "English",
isbn = "978-1-4244-3680-4",
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Binetti, PRA, Leijtens, XJM, Morant Ripoll, A, Vries, de, T, Smalbrugge, E, Oei, YS, Di Cioccio, L, Fédéli, J-M, Lagahe, C, Orobtchouk, R, Thourhout, Van, D, Veldhoven, van, PJ, Nötzel, R & Smit, MK 2009, InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. in Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Institute of Electrical and Electronics Engineers, Piscataway, pp. TuB2-139/140, 22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009), Antalya, Turkey, 4/10/09. https://doi.org/10.1109/LEOS.2009.5343085

InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. / Binetti, P.R.A.; Leijtens, X.J.M.; Morant Ripoll, A.; Vries, de, T.; Smalbrugge, E.; Oei, Y.S.; Di Cioccio, L.; Fédéli, J.-M.; Lagahe, C.; Orobtchouk, R.; Thourhout, Van, D.; Veldhoven, van, P.J.; Nötzel, R.; Smit, M.K.

Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Piscataway : Institute of Electrical and Electronics Engineers, 2009. p. TuB2-139/140.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

AU - Binetti, P.R.A.

AU - Leijtens, X.J.M.

AU - Morant Ripoll, A.

AU - Vries, de, T.

AU - Smalbrugge, E.

AU - Oei, Y.S.

AU - Di Cioccio, L.

AU - Fédéli, J.-M.

AU - Lagahe, C.

AU - Orobtchouk, R.

AU - Thourhout, Van, D.

AU - Veldhoven, van, P.J.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2009

Y1 - 2009

N2 - We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.

AB - We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.

U2 - 10.1109/LEOS.2009.5343085

DO - 10.1109/LEOS.2009.5343085

M3 - Conference contribution

SN - 978-1-4244-3680-4

SP - TuB2-139/140

BT - Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Binetti PRA, Leijtens XJM, Morant Ripoll A, Vries, de T, Smalbrugge E, Oei YS et al. InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. In Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. TuB2-139/140 https://doi.org/10.1109/LEOS.2009.5343085