InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

P.R.A. Binetti, X.J.M. Leijtens, A. Morant Ripoll, T. Vries, de, E. Smalbrugge, Y.S. Oei, L. Di Cioccio, J.-M. Fédéli, C. Lagahe, R. Orobtchouk, D. Thourhout, Van, P.J. Veldhoven, van, R. Nötzel, M.K. Smit

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Abstract

We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.
Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
PagesTuB2-139/140
ISBN (Print)978-1-4244-3680-4
DOIs
Publication statusPublished - 2009
Event22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009) - Antalya, Turkey
Duration: 4 Oct 20098 Oct 2009
Conference number: 22

Conference

Conference22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009)
Abbreviated titleLEOS 2009
CountryTurkey
CityAntalya
Period4/10/098/10/09

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