Abstract
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya |
| Place of Publication | Piscataway |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | TuB2-139/140 |
| ISBN (Print) | 978-1-4244-3680-4 |
| DOIs | |
| Publication status | Published - 2009 |
| Event | 22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009) - Antalya, Turkey Duration: 4 Oct 2009 → 8 Oct 2009 Conference number: 22 |
Conference
| Conference | 22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009) |
|---|---|
| Abbreviated title | LEOS 2009 |
| Country | Turkey |
| City | Antalya |
| Period | 4/10/09 → 8/10/09 |
Fingerprint
Cite this
}
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. / Binetti, P.R.A.; Leijtens, X.J.M.; Morant Ripoll, A.; Vries, de, T.; Smalbrugge, E.; Oei, Y.S.; Di Cioccio, L.; Fédéli, J.-M.; Lagahe, C.; Orobtchouk, R.; Thourhout, Van, D.; Veldhoven, van, P.J.; Nötzel, R.; Smit, M.K.
Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Piscataway : Institute of Electrical and Electronics Engineers, 2009. p. TuB2-139/140.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides
AU - Binetti, P.R.A.
AU - Leijtens, X.J.M.
AU - Morant Ripoll, A.
AU - Vries, de, T.
AU - Smalbrugge, E.
AU - Oei, Y.S.
AU - Di Cioccio, L.
AU - Fédéli, J.-M.
AU - Lagahe, C.
AU - Orobtchouk, R.
AU - Thourhout, Van, D.
AU - Veldhoven, van, P.J.
AU - Nötzel, R.
AU - Smit, M.K.
PY - 2009
Y1 - 2009
N2 - We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.
AB - We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.
U2 - 10.1109/LEOS.2009.5343085
DO - 10.1109/LEOS.2009.5343085
M3 - Conference contribution
SN - 978-1-4244-3680-4
SP - TuB2-139/140
BT - Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya
PB - Institute of Electrical and Electronics Engineers
CY - Piscataway
ER -