InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

P.R.A. Binetti; X.J.M. Leijtens; A. Morant Ripoll; T. Vries, de; E. Smalbrugge; Y.S. Oei; L. Di Cioccio; J.-M. Fédéli; C. Lagahe; R. Orobtchouk; D. Thourhout, Van; P.J. Veldhoven, van; R. Nötzel; M.K. Smit

doi:10.1109/LEOS.2009.5343085

InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

P.R.A. Binetti, X.J.M. Leijtens, A. Morant Ripoll, T. Vries, de, E. Smalbrugge, Y.S. Oei, L. Di Cioccio, J.-M. Fédéli, C. Lagahe, R. Orobtchouk, D. Thourhout, Van, P.J. Veldhoven, van, R. Nötzel, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

148 Downloads (Pure)

Abstract

We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.

Original language	English
Title of host publication	Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	TuB2-139/140
ISBN (Print)	978-1-4244-3680-4
DOIs	https://doi.org/10.1109/LEOS.2009.5343085
Publication status	Published - 2009
Event	22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009) - Antalya, Turkey Duration: 4 Oct 2009 → 8 Oct 2009 Conference number: 22

Conference

Conference	22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009)
Abbreviated title	LEOS 2009
Country/Territory	Turkey
City	Antalya
Period	4/10/09 → 8/10/09

Access to Document

10.1109/LEOS.2009.5343085

Metis233295Final published version, 297 KB

Cite this

Binetti, P. R. A., Leijtens, X. J. M., Morant Ripoll, A., Vries, de, T., Smalbrugge, E., Oei, Y. S., Di Cioccio, L., Fédéli, J-M., Lagahe, C., Orobtchouk, R., Thourhout, Van, D., Veldhoven, van, P. J., Nötzel, R., & Smit, M. K. (2009). InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. In Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya (pp. TuB2-139/140). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/LEOS.2009.5343085

Binetti, P.R.A. ; Leijtens, X.J.M. ; Morant Ripoll, A. ; Vries, de, T. ; Smalbrugge, E. ; Oei, Y.S. ; Di Cioccio, L. ; Fédéli, J.-M. ; Lagahe, C. ; Orobtchouk, R. ; Thourhout, Van, D. ; Veldhoven, van, P.J. ; Nötzel, R. ; Smit, M.K. / InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Piscataway : Institute of Electrical and Electronics Engineers, 2009. pp. TuB2-139/140

@inproceedings{60c3e1f9045e434f837538a524bb91e3,

title = "InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides",

abstract = "We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. {\textcopyright} 2009 IEEE.",

author = "P.R.A. Binetti and X.J.M. Leijtens and {Morant Ripoll}, A. and {Vries, de}, T. and E. Smalbrugge and Y.S. Oei and {Di Cioccio}, L. and J.-M. F{\'e}d{\'e}li and C. Lagahe and R. Orobtchouk and {Thourhout, Van}, D. and {Veldhoven, van}, P.J. and R. N{\"o}tzel and M.K. Smit",

year = "2009",

doi = "10.1109/LEOS.2009.5343085",

language = "English",

isbn = "978-1-4244-3680-4",

pages = "TuB2--139/140",

booktitle = "Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009), LEOS 2009 ; Conference date: 04-10-2009 Through 08-10-2009",

}

Binetti, PRA, Leijtens, XJM, Morant Ripoll, A, Vries, de, T, Smalbrugge, E, Oei, YS, Di Cioccio, L, Fédéli, J-M, Lagahe, C, Orobtchouk, R, Thourhout, Van, D, Veldhoven, van, PJ, Nötzel, R & Smit, MK 2009, InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. in Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Institute of Electrical and Electronics Engineers, Piscataway, pp. TuB2-139/140, 22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009), Antalya, Turkey, 4/10/09. https://doi.org/10.1109/LEOS.2009.5343085

InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. / Binetti, P.R.A.; Leijtens, X.J.M.; Morant Ripoll, A.; Vries, de, T.; Smalbrugge, E.; Oei, Y.S.; Di Cioccio, L.; Fédéli, J.-M.; Lagahe, C.; Orobtchouk, R.; Thourhout, Van, D.; Veldhoven, van, P.J.; Nötzel, R.; Smit, M.K.

Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Piscataway : Institute of Electrical and Electronics Engineers, 2009. p. TuB2-139/140.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

AU - Binetti, P.R.A.

AU - Leijtens, X.J.M.

AU - Morant Ripoll, A.

AU - Vries, de, T.

AU - Smalbrugge, E.

AU - Oei, Y.S.

AU - Di Cioccio, L.

AU - Fédéli, J.-M.

AU - Lagahe, C.

AU - Orobtchouk, R.

AU - Thourhout, Van, D.

AU - Veldhoven, van, P.J.

AU - Nötzel, R.

AU - Smit, M.K.

N1 - Conference code: 22

PY - 2009

Y1 - 2009

N2 - We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.

AB - We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.

U2 - 10.1109/LEOS.2009.5343085

DO - 10.1109/LEOS.2009.5343085

M3 - Conference contribution

SN - 978-1-4244-3680-4

SP - TuB2-139/140

BT - Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009)

Y2 - 4 October 2009 through 8 October 2009

ER -

Binetti PRA, Leijtens XJM, Morant Ripoll A, Vries, de T, Smalbrugge E, Oei YS et al. InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides. In Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. TuB2-139/140 https://doi.org/10.1109/LEOS.2009.5343085

InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

Abstract

Conference

Access to Document

Fingerprint

Cite this