InP-based membrane photodetectors for optical interconnects to Si

P.R.A. Binetti, X.J.M. Leijtens, M. Nikoufard, T. Vries, de, Y.S. Oei, L. Di Cioccio, J.-M. Fédéli, C. Lagahe, R. Orobtchouk, C. Seassal, J. Van Campenhout, D. Thourhout, Van, P.J. Veldhoven, van, R. Nötzel, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)
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Abstract

We present the design, fabrication and a characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0.45 A/W. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
Original languageEnglish
Title of host publicationProceedings of the 2007 4th IEEE International Conference on Group IV Photonics, 19 - 21 September 2007, Tokyo, Japan
Place of PublicationPiscataway, New Jersey, USA
PublisherInstitute of Electrical and Electronics Engineers
Pages34-36
ISBN (Print)978-1-4244-0934-1
Publication statusPublished - 2007
Event4th International Conference on Group IV Photonics (GFP 2007), September 19-21, 2007, Tokyo, Japan - Tokyo, Japan
Duration: 19 Sep 200721 Sep 2007

Conference

Conference4th International Conference on Group IV Photonics (GFP 2007), September 19-21, 2007, Tokyo, Japan
Abbreviated titleGFP 2007
CountryJapan
CityTokyo
Period19/09/0721/09/07

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