(In,Ga)As sidewall quantum wires on shallow-patterned InP (311) A

D. Zhou; R. Nötzel; Q. Gong; P. Offermans; P.M. Koenraad; P.J. Veldhoven, van; F.W.M. Otten, van; T.J. Eijkemans; J.H. Wolter

doi:10.1063/1.1862763

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311) A

D. Zhou, R. Nötzel, Q. Gong, P. Offermans, P.M. Koenraad, P.J. Veldhoven, van, F.W.M. Otten, van, T.J. Eijkemans, J.H. Wolter

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

151 Downloads (Pure)

Abstract

(In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa stripes on shallow-patterned InP (311)A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence (micro-PL) spectroscopy. The PL of the (In,Ga)As QWires with InP and quaternary (Ga,In)(As,P) barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60–70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the (In,Ga)As layer thickness but also by the patterned mesa height. Stacked (In,Ga)As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 µm in the technologically important wavelength region for telecommunication applications. ©2005 American Institute of Physics

Original language	English
Article number	063510
Pages (from-to)	063510-1/6
Number of pages	6
Journal	Journal of Applied Physics
Volume	97
Issue number	6
DOIs	https://doi.org/10.1063/1.1862763
Publication status	Published - 2005

Access to Document

10.1063/1.1862763

Metis188687Final published version, 103 KB

Cite this

@article{bea521fbf9bd4bbc909fccc47cc3ddea,

title = "(In,Ga)As sidewall quantum wires on shallow-patterned InP (311) A",

abstract = "(In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa stripes on shallow-patterned InP (311)A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence (micro-PL) spectroscopy. The PL of the (In,Ga)As QWires with InP and quaternary (Ga,In)(As,P) barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60–70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the (In,Ga)As layer thickness but also by the patterned mesa height. Stacked (In,Ga)As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 µm in the technologically important wavelength region for telecommunication applications. {\textcopyright}2005 American Institute of Physics",

author = "D. Zhou and R. N{\"o}tzel and Q. Gong and P. Offermans and P.M. Koenraad and {Veldhoven, van}, P.J. and {Otten, van}, F.W.M. and T.J. Eijkemans and J.H. Wolter",

year = "2005",

doi = "10.1063/1.1862763",

language = "English",

volume = "97",

pages = "063510--1/6",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - (In,Ga)As sidewall quantum wires on shallow-patterned InP (311) A

AU - Zhou, D.

AU - Nötzel, R.

AU - Gong, Q.

AU - Offermans, P.

AU - Koenraad, P.M.

AU - Veldhoven, van, P.J.

AU - Otten, van, F.W.M.

AU - Eijkemans, T.J.

AU - Wolter, J.H.

PY - 2005

Y1 - 2005

N2 - (In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa stripes on shallow-patterned InP (311)A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence (micro-PL) spectroscopy. The PL of the (In,Ga)As QWires with InP and quaternary (Ga,In)(As,P) barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60–70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the (In,Ga)As layer thickness but also by the patterned mesa height. Stacked (In,Ga)As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 µm in the technologically important wavelength region for telecommunication applications. ©2005 American Institute of Physics

AB - (In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa stripes on shallow-patterned InP (311)A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence (micro-PL) spectroscopy. The PL of the (In,Ga)As QWires with InP and quaternary (Ga,In)(As,P) barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60–70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the (In,Ga)As layer thickness but also by the patterned mesa height. Stacked (In,Ga)As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 µm in the technologically important wavelength region for telecommunication applications. ©2005 American Institute of Physics

U2 - 10.1063/1.1862763

DO - 10.1063/1.1862763

M3 - Article

SN - 0021-8979

VL - 97

SP - 063510-1/6

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063510

ER -

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311) A

Abstract

Access to Document

Fingerprint

Cite this