(In,Ga)As sidewall quantum wires on shallow-patterned InP (311) A

D. Zhou, R. Nötzel, Q. Gong, P. Offermans, P.M. Koenraad, P.J. Veldhoven, van, F.W.M. Otten, van, T.J. Eijkemans, J.H. Wolter

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Abstract

(In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa stripes on shallow-patterned InP (311)A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence (micro-PL) spectroscopy. The PL of the (In,Ga)As QWires with InP and quaternary (Ga,In)(As,P) barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60–70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the (In,Ga)As layer thickness but also by the patterned mesa height. Stacked (In,Ga)As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 µm in the technologically important wavelength region for telecommunication applications. ©2005 American Institute of Physics
Original languageEnglish
Article number063510
Pages (from-to)063510-1/6
Number of pages6
JournalJournal of Applied Physics
Volume97
Issue number6
DOIs
Publication statusPublished - 2005

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