(In,Ga)As islands formed on shallow patterned GaAs (100) substrates by molecular beam epitaxy

Q. Gong, R. Nötzel, H.-P. Schönherr, K.H. Ploog

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)

Abstract

We investigate the growth on GaAs (100) substrates patterned with shallow mesa gratings along [011], [010], and [011], respectively. Nonplanar surfaces consisting of steps and (100) terraces are formed during GaAs overgrowth. The pattern direction determines the type of steps distributed on the surface, which drastically affects the evolution of the surface morphology. Ordering of (In,Ga)As islands is found on the sample with mesas along [011] after growth of In/sub 0.34/Ga/sub 0.66/As on the nonplanar GaAs surface. Type and density of the pattern-induced steps play an important role for formation and alignment of islands along [011]
Original languageEnglish
Pages (from-to)1176-1180
JournalPhysica E: Low-Dimensional Systems & Nanostructures
Volume13
Issue number2-4
DOIs
Publication statusPublished - 2002

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