TY - JOUR
T1 - (In,Ga)As islands formed on shallow patterned GaAs (100) substrates by molecular beam epitaxy
AU - Gong, Q.
AU - Nötzel, R.
AU - Schönherr, H.-P.
AU - Ploog, K.H.
PY - 2002
Y1 - 2002
N2 - We investigate the growth on GaAs (100) substrates patterned with shallow mesa gratings along [011], [010], and [011], respectively. Nonplanar surfaces consisting of steps and (100) terraces are formed during GaAs overgrowth. The pattern direction determines the type of steps distributed on the surface, which drastically affects the evolution of the surface morphology. Ordering of (In,Ga)As islands is found on the sample with mesas along [011] after growth of In/sub 0.34/Ga/sub 0.66/As on the nonplanar GaAs surface. Type and density of the pattern-induced steps play an important role for formation and alignment of islands along [011]
AB - We investigate the growth on GaAs (100) substrates patterned with shallow mesa gratings along [011], [010], and [011], respectively. Nonplanar surfaces consisting of steps and (100) terraces are formed during GaAs overgrowth. The pattern direction determines the type of steps distributed on the surface, which drastically affects the evolution of the surface morphology. Ordering of (In,Ga)As islands is found on the sample with mesas along [011] after growth of In/sub 0.34/Ga/sub 0.66/As on the nonplanar GaAs surface. Type and density of the pattern-induced steps play an important role for formation and alignment of islands along [011]
U2 - 10.1016/S1386-9477(02)00330-2
DO - 10.1016/S1386-9477(02)00330-2
M3 - Article
SN - 1386-9477
VL - 13
SP - 1176
EP - 1180
JO - Physica E: Low-Dimensional Systems & Nanostructures
JF - Physica E: Low-Dimensional Systems & Nanostructures
IS - 2-4
ER -