InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer

Y. Shu; Gang Li; H.H. Tan; C. Jagadish; F. Karouta

doi:10.1109/LEOS.1996.571586

InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer

Y. Shu, Gang Li, H.H. Tan, C. Jagadish, F. Karouta

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing

Original language	English
Title of host publication	Proc. IEEE/LEOS '96 Meeting
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	132-134
ISBN (Print)	0-7803-3160-5
DOIs	https://doi.org/10.1109/LEOS.1996.571586
Publication status	Published - 1996
Event	9th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 1996), November 18-21, 1996, Boston, MA, USA - Boston, MA, United States Duration: 18 Nov 1996 → 21 Nov 1996

Conference

Conference	9th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 1996), November 18-21, 1996, Boston, MA, USA
Abbreviated title	LEOS 1996
Country/Territory	United States
City	Boston, MA
Period	18/11/96 → 21/11/96

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10.1109/LEOS.1996.571586

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title = "InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer",

abstract = "In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing",

author = "Y. Shu and Gang Li and H.H. Tan and C. Jagadish and F. Karouta",

year = "1996",

doi = "10.1109/LEOS.1996.571586",

language = "English",

isbn = "0-7803-3160-5",

pages = "132--134",

booktitle = "Proc. IEEE/LEOS '96 Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "9th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 1996), November 18-21, 1996, Boston, MA, USA, LEOS 1996 ; Conference date: 18-11-1996 Through 21-11-1996",

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Shu, Y, Li, G, Tan, HH, Jagadish, C & Karouta, F 1996, InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer. in Proc. IEEE/LEOS '96 Meeting. Institute of Electrical and Electronics Engineers, Piscataway, pp. 132-134, 9th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 1996), November 18-21, 1996, Boston, MA, USA, Boston, MA, United States, 18/11/96. https://doi.org/10.1109/LEOS.1996.571586

TY - GEN

T1 - InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer

AU - Shu, Y.

AU - Li, Gang

AU - Tan, H.H.

AU - Jagadish, C.

AU - Karouta, F.

PY - 1996

Y1 - 1996

N2 - In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing

AB - In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing

U2 - 10.1109/LEOS.1996.571586

DO - 10.1109/LEOS.1996.571586

M3 - Conference contribution

SN - 0-7803-3160-5

SP - 132

EP - 134

BT - Proc. IEEE/LEOS '96 Meeting

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 9th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 1996), November 18-21, 1996, Boston, MA, USA

Y2 - 18 November 1996 through 21 November 1996

ER -

InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer

Abstract

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