InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer

Y. Shu, Gang Li, H.H. Tan, C. Jagadish, F. Karouta

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing
Original languageEnglish
Title of host publicationProc. IEEE/LEOS '96 Meeting
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages132-134
ISBN (Print)0-7803-3160-5
DOIs
Publication statusPublished - 1996
Event9th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 1996), November 18-21, 1996, Boston, MA, USA - Boston, MA, United States
Duration: 18 Nov 199621 Nov 1996

Conference

Conference9th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 1996), November 18-21, 1996, Boston, MA, USA
Abbreviated titleLEOS 1996
CountryUnited States
CityBoston, MA
Period18/11/9621/11/96

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