InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

D.G. Revin; L.R. Wilson; E.A. Zibik; R.P. Green; J.W. Cockburn; M.J. Steer; R.J. Airey; M. Hopkinson; P. Offermans; P.M. Koenraad; J.H. Wolter

doi:10.1109/CLEO.2005.201741

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

D.G. Revin, L.R. Wilson, E.A. Zibik, R.P. Green, J.W. Cockburn, M.J. Steer, R.J. Airey, M. Hopkinson, P. Offermans, P.M. Koenraad, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system

Original language	English
Title of host publication	2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	248-250
ISBN (Print)	1-55752-795-4
DOIs	https://doi.org/10.1109/CLEO.2005.201741
Publication status	Published - 2009
Event	2005 Conference on Lasers and Electro-Optics (CLEO® 2005) - Baltimore, United States Duration: 22 May 2005 → 27 May 2005

Conference

Conference	2005 Conference on Lasers and Electro-Optics (CLEO® 2005)
Abbreviated title	CLEO® 2005
Country/Territory	United States
City	Baltimore
Period	22/05/05 → 27/05/05

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10.1109/CLEO.2005.201741

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Revin, D. G., Wilson, L. R., Zibik, E. A., Green, R. P., Cockburn, J. W., Steer, M. J., Airey, R. J., Hopkinson, M., Offermans, P., Koenraad, P. M., & Wolter, J. H. (2009). InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. In 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1 (pp. 248-250). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/CLEO.2005.201741

@inproceedings{98d6e29edd8843a0bdf1b556d7aec3a6,

title = "InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm",

abstract = "We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system",

author = "D.G. Revin and L.R. Wilson and E.A. Zibik and R.P. Green and J.W. Cockburn and M.J. Steer and R.J. Airey and M. Hopkinson and P. Offermans and P.M. Koenraad and J.H. Wolter",

year = "2009",

doi = "10.1109/CLEO.2005.201741",

language = "English",

isbn = "1-55752-795-4",

pages = "248--250",

booktitle = "2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2005 Conference on Lasers and Electro-Optics (CLEO{\textregistered} 2005), CLEO{\textregistered} 2005 ; Conference date: 22-05-2005 Through 27-05-2005",

}

Revin, DG, Wilson, LR, Zibik, EA, Green, RP, Cockburn, JW, Steer, MJ, Airey, RJ, Hopkinson, M, Offermans, P, Koenraad, PM & Wolter, JH 2009, InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. in 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1. Institute of Electrical and Electronics Engineers, Piscataway, pp. 248-250, 2005 Conference on Lasers and Electro-Optics (CLEO® 2005), Baltimore, Maryland, United States, 22/05/05. https://doi.org/10.1109/CLEO.2005.201741

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. / Revin, D.G.; Wilson, L.R.; Zibik, E.A. et al.
2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1. Piscataway: Institute of Electrical and Electronics Engineers, 2009. p. 248-250.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

AU - Revin, D.G.

AU - Wilson, L.R.

AU - Zibik, E.A.

AU - Green, R.P.

AU - Cockburn, J.W.

AU - Steer, M.J.

AU - Airey, R.J.

AU - Hopkinson, M.

AU - Offermans, P.

AU - Koenraad, P.M.

AU - Wolter, J.H.

PY - 2009

Y1 - 2009

N2 - We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system

AB - We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system

U2 - 10.1109/CLEO.2005.201741

DO - 10.1109/CLEO.2005.201741

M3 - Conference contribution

SN - 1-55752-795-4

SP - 248

EP - 250

BT - 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2005 Conference on Lasers and Electro-Optics (CLEO® 2005)

Y2 - 22 May 2005 through 27 May 2005

ER -

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

Abstract

Conference

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