InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

D.G. Revin, L.R. Wilson, E.A. Zibik, R.P. Green, J.W. Cockburn, M.J. Steer, R.J. Airey, M. Hopkinson, P. Offermans, P.M. Koenraad, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system
Original languageEnglish
Title of host publication2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages248-250
ISBN (Print)1-55752-795-4
DOIs
Publication statusPublished - 2009
Event2005 Conference on Lasers and Electro-Optics (CLEO® 2005) - Baltimore, United States
Duration: 22 May 200527 May 2005

Conference

Conference2005 Conference on Lasers and Electro-Optics (CLEO® 2005)
Abbreviated titleCLEO® 2005
CountryUnited States
CityBaltimore
Period22/05/0527/05/05

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quantum cascade lasers

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Revin, D. G., Wilson, L. R., Zibik, E. A., Green, R. P., Cockburn, J. W., Steer, M. J., ... Wolter, J. H. (2009). InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. In 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1 (pp. 248-250). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/CLEO.2005.201741
Revin, D.G. ; Wilson, L.R. ; Zibik, E.A. ; Green, R.P. ; Cockburn, J.W. ; Steer, M.J. ; Airey, R.J. ; Hopkinson, M. ; Offermans, P. ; Koenraad, P.M. ; Wolter, J.H. / InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1. Piscataway : Institute of Electrical and Electronics Engineers, 2009. pp. 248-250
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title = "InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm",
abstract = "We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system",
author = "D.G. Revin and L.R. Wilson and E.A. Zibik and R.P. Green and J.W. Cockburn and M.J. Steer and R.J. Airey and M. Hopkinson and P. Offermans and P.M. Koenraad and J.H. Wolter",
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language = "English",
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pages = "248--250",
booktitle = "2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1",
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Revin, DG, Wilson, LR, Zibik, EA, Green, RP, Cockburn, JW, Steer, MJ, Airey, RJ, Hopkinson, M, Offermans, P, Koenraad, PM & Wolter, JH 2009, InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. in 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1. Institute of Electrical and Electronics Engineers, Piscataway, pp. 248-250, 2005 Conference on Lasers and Electro-Optics (CLEO® 2005), Baltimore, United States, 22/05/05. https://doi.org/10.1109/CLEO.2005.201741

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. / Revin, D.G.; Wilson, L.R.; Zibik, E.A.; Green, R.P.; Cockburn, J.W.; Steer, M.J.; Airey, R.J.; Hopkinson, M.; Offermans, P.; Koenraad, P.M.; Wolter, J.H.

2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1. Piscataway : Institute of Electrical and Electronics Engineers, 2009. p. 248-250.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

AU - Revin, D.G.

AU - Wilson, L.R.

AU - Zibik, E.A.

AU - Green, R.P.

AU - Cockburn, J.W.

AU - Steer, M.J.

AU - Airey, R.J.

AU - Hopkinson, M.

AU - Offermans, P.

AU - Koenraad, P.M.

AU - Wolter, J.H.

PY - 2009

Y1 - 2009

N2 - We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system

AB - We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system

U2 - 10.1109/CLEO.2005.201741

DO - 10.1109/CLEO.2005.201741

M3 - Conference contribution

SN - 1-55752-795-4

SP - 248

EP - 250

BT - 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Revin DG, Wilson LR, Zibik EA, Green RP, Cockburn JW, Steer MJ et al. InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. In 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. 248-250 https://doi.org/10.1109/CLEO.2005.201741