Infrared spectroscopy of wafer-scale graphene

H. Yan, F. Xia, W. Zhu, M. Freitag, C.D. Dimitrakopoulos, A.A. Bol, G.S. Tulevski, Ph. Avouris

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Abstract

We report spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions) and the wavelength at which Pauli blocking occurs due to band filling. From these, the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37 ± 0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically doped single-layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 µm (40 cm–1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.
Original languageEnglish
Pages (from-to)9854-9860
Number of pages7
JournalACS Nano
Volume5
Issue number12
DOIs
Publication statusPublished - 2012
Externally publishedYes

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Graphite
Graphene
Infrared spectroscopy
graphene
infrared spectroscopy
wafers
Infrared radiation
Optical conductivity
Carrier mobility
carrier mobility
Silicon carbide
silicon carbides
Optoelectronic devices
Chemical vapor deposition
Doping (additives)
vapor deposition
Spectroscopy
Scattering
Wavelength
conductivity

Cite this

Yan, H., Xia, F., Zhu, W., Freitag, M., Dimitrakopoulos, C. D., Bol, A. A., ... Avouris, P. (2012). Infrared spectroscopy of wafer-scale graphene. ACS Nano, 5(12), 9854-9860. https://doi.org/10.1021/nn203506n
Yan, H. ; Xia, F. ; Zhu, W. ; Freitag, M. ; Dimitrakopoulos, C.D. ; Bol, A.A. ; Tulevski, G.S. ; Avouris, Ph. / Infrared spectroscopy of wafer-scale graphene. In: ACS Nano. 2012 ; Vol. 5, No. 12. pp. 9854-9860.
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Yan, H, Xia, F, Zhu, W, Freitag, M, Dimitrakopoulos, CD, Bol, AA, Tulevski, GS & Avouris, P 2012, 'Infrared spectroscopy of wafer-scale graphene', ACS Nano, vol. 5, no. 12, pp. 9854-9860. https://doi.org/10.1021/nn203506n

Infrared spectroscopy of wafer-scale graphene. / Yan, H.; Xia, F.; Zhu, W.; Freitag, M.; Dimitrakopoulos, C.D.; Bol, A.A.; Tulevski, G.S.; Avouris, Ph.

In: ACS Nano, Vol. 5, No. 12, 2012, p. 9854-9860.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Yan, H.

AU - Xia, F.

AU - Zhu, W.

AU - Freitag, M.

AU - Dimitrakopoulos, C.D.

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AU - Tulevski, G.S.

AU - Avouris, Ph.

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N2 - We report spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions) and the wavelength at which Pauli blocking occurs due to band filling. From these, the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37 ± 0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically doped single-layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 µm (40 cm–1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.

AB - We report spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions) and the wavelength at which Pauli blocking occurs due to band filling. From these, the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37 ± 0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically doped single-layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 µm (40 cm–1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.

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Yan H, Xia F, Zhu W, Freitag M, Dimitrakopoulos CD, Bol AA et al. Infrared spectroscopy of wafer-scale graphene. ACS Nano. 2012;5(12):9854-9860. https://doi.org/10.1021/nn203506n