Infrared analysis of the bulk silicon-hydrogen bonds as an optimization tool for high-rate deposition of microcrystalline solar cells

A.H.M. Smets, T. Matsui, M. Kondo

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Abstract

It is demonstrated that the signature of bulk hydrogen stretching modes in the infrared of microcrystalline silicon (µc-Si:H) deposited at high deposition rates can be used for solar cell optimization in the high pressure depletion regime. A relation between the performance of a p-i-n solar cell and the hydride stretching modes corresponding to hydrogenated crystalline grain boundaries is observed. These crystalline surfaces show postdeposition oxidation and the absence of these surfaces in the µc-Si:H matrix reflects device grade microcrystalline material.
Original languageEnglish
Article number033506
Pages (from-to)033506-1/3
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number3
DOIs
Publication statusPublished - 2008

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