Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

B. Macco, D. Deligiannis, S. Smit, R.A.C.M.M. Swaaij, van, M. Zeman, W.M.M. Kessels

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Abstract

In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by atomic layer deposition (ALD). It is shown that the ALD process, as opposed to sputtering, does not impair the chemical passivation. However, the field-effect passivation is reduced by the ZnO:Al. The resulting decrease in low injection-level lifetime can be tuned by changing the ZnO:Al doping level (carrier density = 7 × 1019–7 × 1020 cm-3), which is explained by a change in the TCO workfunction. Additionally, it is shown that a ~10–15 nm ALD ZnO:Al layer is sufficient to mitigate damage to the a-Si:H by subsequent sputtering, which is correlated to ALD film closure at this thickness.
Original languageEnglish
Pages (from-to)122001-1/5
Number of pages5
JournalSemiconductor Science and Technology
Volume29
Issue number12
DOIs
Publication statusPublished - Dec 2014

Keywords

  • silicon heterojunction
  • atomic layer deposition
  • passivation
  • solar cell
  • transparent conductive oxide

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