@inproceedings{27ba533e5a4542a6b4f25404d9dc2e3c,
title = "Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs",
abstract = "We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of various PECVD parameters like gas composition (SiH4/NH3 ratio and ammoniafree SiNx), process pressure, plasma power and deposition temperature. The best SiNx layer is Si-rich and has a refractive index of 2.01, an extinction coefficient of 0.03 at 3.44 eV and an optical band gap of 2.87eV. The best device performance was only achieved when the optimized SiNx layer was used in conjunction with a low-power Ar-plasma after the metallization of the ohmic contacts and cleaning using an ammonia dip just before the Schottky gate metallization. The latter treatment accounted for a substantial reduction of the gate and drain leakage currents densities from 6.7 mA/mm to 400 µA/mm. {\textcopyright} The Electrochemical Society.",
author = "F. Karouta and M.C.J.C.M. Kr{\"a}mer and J.J.M. Kwaspen and A. Grzegorczyk and P.R. Hageman and B. Hoex and W.M.M. Kessels and J.H. Klootwijk and E.C. Timmering and M.K. Smit",
year = "2008",
doi = "10.1149/1.2983174",
language = "English",
isbn = "978-1-56677-653-0",
series = "ECS Transactions",
publisher = "ECS",
pages = "181--191",
editor = "J. Wang and K. Shiojima",
booktitle = "proceedings of the. ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7), October 12 - October 17, 2008, Honolulu, Hawaii",
note = "ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7), October 12-17, 2008, Honolulu, HI, USA, 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}