Influence of the H/C ratio in precursor gases on a-C:H films deposited by means of an expanding thermal plasma

K.G.Y. Letourneur, S.C.M. Aerts, M.C.M. Van De Sanden, D.C. Schram

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Abstract

Amorphous hydrogenated carbon films (a-C:H) were deposited by means of an expanding thermal plasma with addition of different precursor gases such as C/sub 2/H/sub 2/, CH/sub 4/, C/sub 2/H/sub 4/ and C/sub 2/H/sub 6/ with and without H/sub 2/ addition. Infrared absorption spectroscopy and in situ ellipsometry have been used to provide information on the refractive index, the growth rate and the structure of the layers. It appears that the lower the H/C ratio in the plasma, the better are the films in terms of refractive index and growth rate. A slight improvement of the refractive index is observed with an increase of the substrate temperature from 0 degrees C to 290 degrees C whereas the growth rate decreases
Original languageEnglish
Pages (from-to)343-346
Number of pages4
JournalVide: Science, Technique et Applications
Volume53
Issue number284 Suppl. 1
Publication statusPublished - 1 Apr 1997

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