TY - JOUR
T1 - Influence of the H/C ratio in precursor gases on a-C:H films deposited by means of an expanding thermal plasma
AU - Letourneur, K.G.Y.
AU - Aerts, S.C.M.
AU - Van De Sanden, M.C.M.
AU - Schram, D.C.
PY - 1997/4/1
Y1 - 1997/4/1
N2 - Amorphous hydrogenated carbon films (a-C:H) were deposited by means of an expanding thermal plasma with addition of different precursor gases such as C/sub 2/H/sub 2/, CH/sub 4/, C/sub 2/H/sub 4/ and C/sub 2/H/sub 6/ with and without H/sub 2/ addition. Infrared absorption spectroscopy and in situ ellipsometry have been used to provide information on the refractive index, the growth rate and the structure of the layers. It appears that the lower the H/C ratio in the plasma, the better are the films in terms of refractive index and growth rate. A slight improvement of the refractive index is observed with an increase of the substrate temperature from 0 degrees C to 290 degrees C whereas the growth rate decreases
AB - Amorphous hydrogenated carbon films (a-C:H) were deposited by means of an expanding thermal plasma with addition of different precursor gases such as C/sub 2/H/sub 2/, CH/sub 4/, C/sub 2/H/sub 4/ and C/sub 2/H/sub 6/ with and without H/sub 2/ addition. Infrared absorption spectroscopy and in situ ellipsometry have been used to provide information on the refractive index, the growth rate and the structure of the layers. It appears that the lower the H/C ratio in the plasma, the better are the films in terms of refractive index and growth rate. A slight improvement of the refractive index is observed with an increase of the substrate temperature from 0 degrees C to 290 degrees C whereas the growth rate decreases
UR - http://www.scopus.com/inward/record.url?scp=20544437210&partnerID=8YFLogxK
M3 - Article
SN - 1266-0167
VL - 53
SP - 343
EP - 346
JO - Vide: Science, Technique et Applications
JF - Vide: Science, Technique et Applications
IS - 284 Suppl. 1
ER -