Influence of the deposition temperature on the c-Si Surface passivation by Al2 O3 films synthesized by ALD and PECVD

G. Dingemans; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1149/1.3276040

Influence of the deposition temperature on the c-Si Surface passivation by Al2 O3 films synthesized by ALD and PECVD

G. Dingemans, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

The material properties and c-Si surface passivation have been investigated for Al2O3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures (Tdep) between 25 and 400°C. Optimal surface passivation by ALD Al2O3 was achieved at Tdep=150–250°C with Seff

Original language	English
Pages (from-to)	H76-H79
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	3
DOIs	https://doi.org/10.1149/1.3276040
Publication status	Published - 2010

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title = "Influence of the deposition temperature on the c-Si Surface passivation by Al2 O3 films synthesized by ALD and PECVD",

abstract = "The material properties and c-Si surface passivation have been investigated for Al2O3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures (Tdep) between 25 and 400°C. Optimal surface passivation by ALD Al2O3 was achieved at Tdep=150–250°C with Seff",

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AU - Dingemans, G.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2010

Y1 - 2010

N2 - The material properties and c-Si surface passivation have been investigated for Al2O3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures (Tdep) between 25 and 400°C. Optimal surface passivation by ALD Al2O3 was achieved at Tdep=150–250°C with Seff

AB - The material properties and c-Si surface passivation have been investigated for Al2O3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures (Tdep) between 25 and 400°C. Optimal surface passivation by ALD Al2O3 was achieved at Tdep=150–250°C with Seff

U2 - 10.1149/1.3276040

DO - 10.1149/1.3276040

M3 - Article

SN - 1099-0062

VL - 13

SP - H76-H79

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 3

ER -

Influence of the deposition temperature on the c-Si Surface passivation by Al2 O3 films synthesized by ALD and PECVD

Abstract

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