Influence of the deposition temperature on the c-Si Surface passivation by Al2 O3 films synthesized by ALD and PECVD

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Abstract

The material properties and c-Si surface passivation have been investigated for Al2O3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures (Tdep) between 25 and 400°C. Optimal surface passivation by ALD Al2O3 was achieved at Tdep=150–250°C with Seff
Original languageEnglish
Pages (from-to)H76-H79
JournalElectrochemical and Solid-State Letters
Volume13
Issue number3
DOIs
Publication statusPublished - 2010

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