Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide

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Abstract

The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.

Original languageEnglish
Pages (from-to)3432-3434
Number of pages3
JournalJournal of the Electrochemical Society
Volume138
Issue number11
DOIs
Publication statusPublished - 1 Jan 1991
Externally publishedYes

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