Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide

C.H.L. Weijtens

doi:10.1149/1.2085429

Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide

C.H.L. Weijtens

Research output: Contribution to journal › Article › Academic › peer-review

36 Citations (Scopus)

Abstract

The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.

Original language	English
Pages (from-to)	3432-3434
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	138
Issue number	11
DOIs	https://doi.org/10.1149/1.2085429
Publication status	Published - 1 Jan 1991
Externally published	Yes

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title = "Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide",

abstract = "The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.",

author = "C.H.L. Weijtens",

year = "1991",

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doi = "10.1149/1.2085429",

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N2 - The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.

AB - The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide

Abstract

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