Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

R. Duffy, V.C. Venezia, A. Heringa, B.J. Pawlak, M.J.P. Hopstaken, Y. Tamminga, T. Dao, F. Roozeboom, C.C. Wang, C.H. Diaz, P.B. Griffin

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)
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Abstract

The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

Original languageEnglish
Pages (from-to)865-868
Number of pages4
JournalJournal of Vacuum Science and Technology, B
Volume22
Issue number3
DOIs
Publication statusPublished - 1 May 2004
Externally publishedYes

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