Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

R. Duffy; V.C. Venezia; A. Heringa; B.J. Pawlak; M.J.P. Hopstaken; Y. Tamminga; T. Dao; F. Roozeboom; C.C. Wang; C.H. Diaz; P.B. Griffin

doi:10.1116/1.1695333

Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

R. Duffy, V.C. Venezia, A. Heringa, B.J. Pawlak, M.J.P. Hopstaken, Y. Tamminga, T. Dao, F. Roozeboom, C.C. Wang, C.H. Diaz, P.B. Griffin

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Abstract

The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

Original language	English
Pages (from-to)	865-868
Number of pages	4
Journal	Journal of Vacuum Science and Technology, B
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1695333
Publication status	Published - 1 May 2004
Externally published	Yes

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@article{1fd98b1519754f6f8c48f19de89c80b0,

title = "Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon",

abstract = "The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.",

author = "R. Duffy and V.C. Venezia and A. Heringa and B.J. Pawlak and M.J.P. Hopstaken and Y. Tamminga and T. Dao and F. Roozeboom and C.C. Wang and C.H. Diaz and P.B. Griffin",

year = "2004",

month = may,

day = "1",

doi = "10.1116/1.1695333",

language = "English",

volume = "22",

pages = "865--868",

journal = "Journal of Vacuum Science and Technology, B",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

AU - Duffy, R.

AU - Venezia, V.C.

AU - Heringa, A.

AU - Pawlak, B.J.

AU - Hopstaken, M.J.P.

AU - Tamminga, Y.

AU - Dao, T.

AU - Roozeboom, F.

AU - Wang, C.C.

AU - Diaz, C.H.

AU - Griffin, P.B.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

AB - The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

UR - http://www.scopus.com/inward/record.url?scp=3242716062&partnerID=8YFLogxK

U2 - 10.1116/1.1695333

DO - 10.1116/1.1695333

M3 - Article

AN - SCOPUS:3242716062

VL - 22

SP - 865

EP - 868

JO - Journal of Vacuum Science and Technology, B

JF - Journal of Vacuum Science and Technology, B

SN - 1071-1023

IS - 3

ER -

Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

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