Abstract
The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.
Original language | English |
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Pages (from-to) | 865-868 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B |
Volume | 22 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 May 2004 |
Externally published | Yes |