Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

R. Duffy; V.C. Venezia; A. Heringa; B.J. Pawlak; M.J.P. Hopstaken; Y. Tamminga; T. Dao; F. Roozeboom; C.C. Wang; C.H. Diaz; P.B. Griffin

doi:10.1116/1.1695333

Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

R. Duffy, V.C. Venezia, A. Heringa, B.J. Pawlak, M.J.P. Hopstaken, Y. Tamminga, T. Dao, F. Roozeboom, C.C. Wang, C.H. Diaz, P.B. Griffin

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Abstract

The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

Original language	English
Pages (from-to)	865-868
Number of pages	4
Journal	Journal of Vacuum Science and Technology B
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1695333
Publication status	Published - 1 May 2004
Externally published	Yes

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AU - Duffy, R.

AU - Venezia, V.C.

AU - Heringa, A.

AU - Pawlak, B.J.

AU - Hopstaken, M.J.P.

AU - Tamminga, Y.

AU - Dao, T.

AU - Roozeboom, F.

AU - Wang, C.C.

AU - Diaz, C.H.

AU - Griffin, P.B.

PY - 2004/5/1

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N2 - The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

AB - The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

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JF - Journal of Vacuum Science and Technology B

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ER -

Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

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