Abstract
We have investigated the effect of Inductively Coupled Plasma (ICP) etching using a C12-CHrH2 chemistry on the surface morphology of InP substrates. We have observed a strong dependence of the surface morphology on the etching times of semi-insulating ( s i ) InP-wafers. Pillars are formed after a sufficient etching time.
Photoluminescence characterization revealed a strong correlation between morphology and PL signal intensity.
Original language | English |
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Title of host publication | Proc. 16th Intern. Conf. on Indium Phosphide and Related Materials (IPRM) 2004, 31 May - 4 June 2004 |
Place of Publication | Kagoshima, Japan |
Pages | 322-325 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 2004 |
Event | 16th International Conference on Indium Phosphide and Related Materials (IPRM 2004) - Kagoshima, Japan Duration: 1 Jan 2004 → … Conference number: 16 |
Publication series
Name | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
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ISSN (Print) | 1092-8669 |
Conference
Conference | 16th International Conference on Indium Phosphide and Related Materials (IPRM 2004) |
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Abbreviated title | IPRM 2004 |
Country/Territory | Japan |
City | Kagoshima |
Period | 1/01/04 → … |