Influence of grain size on the transport properties of Ni80Fe20 and Cu thin films

T.G.S.M. Rijks, R.L.H. Sour, D.G. Neerinck, A.E.M. Veirman, de, R. Coehoorn, J.C.S. Kools, M.F. Gillies, W.J.M. Jonge, de

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Abstract

The conductivity of sputtered Ta/Cu/Ta and Ta/Ni80Fe20/Ta thin films was measured for a film thickness ranging from 20 to 1500 Angstrom. The measured data were analyzed using a semi-classical model for the electron transport, that includes grain boundary scattering. It was found that in these films grain boundaries are an important source of electron scattering, in Ni80Fe20 leading to an effective spin dependence of the scattering which is considerably smaller than the intrinsic spin dependence of the scattering.
Original languageEnglish
Pages (from-to)3865-3867
JournalIEEE Transactions on Magnetics
Volume31
Issue number6
DOIs
Publication statusPublished - 1995

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    Rijks, T. G. S. M., Sour, R. L. H., Neerinck, D. G., Veirman, de, A. E. M., Coehoorn, R., Kools, J. C. S., Gillies, M. F., & Jonge, de, W. J. M. (1995). Influence of grain size on the transport properties of Ni80Fe20 and Cu thin films. IEEE Transactions on Magnetics, 31(6), 3865-3867. https://doi.org/10.1109/20.489798