Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

J.M. Ulloa Herrero, S. Anantathanasarn, P.J. Veldhoven, van, P.M. Koenraad, R. Nötzel

Research output: Contribution to journal › Article › Academic › peer-review

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