Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

J.M. Ulloa Herrero; S. Anantathanasarn; P.J. Veldhoven, van; P.M. Koenraad; R. Nötzel

doi:10.1063/1.2884692

Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

J.M. Ulloa Herrero, S. Anantathanasarn, P.J. Veldhoven, van, P.M. Koenraad, R. Nötzel

Research output: Contribution to journal › Article › Academic › peer-review

15 Citations (Scopus)

175 Downloads (Pure)

Abstract

Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAs/InGaAsP/InP quantum dots (QDs) are modified when an ultrathin (0–1.5 ML) GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the As/P exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the As/P exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.

Original language	English
Article number	083103
Pages (from-to)	083103-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	92
Issue number	8
DOIs	https://doi.org/10.1063/1.2884692
Publication status	Published - 2008

Access to Document

10.1063/1.2884692

Metis216888Final published version, 371 KB

Cite this

@article{fddfdb28ada94adfba0925a2bd69f11c,

title = "Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy",

abstract = "Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAs/InGaAsP/InP quantum dots (QDs) are modified when an ultrathin (0–1.5 ML) GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the As/P exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the As/P exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.",

author = "{Ulloa Herrero}, J.M. and S. Anantathanasarn and {Veldhoven, van}, P.J. and P.M. Koenraad and R. N{\"o}tzel",

year = "2008",

doi = "10.1063/1.2884692",

language = "English",

volume = "92",

pages = "083103--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy. / Ulloa Herrero, J.M.; Anantathanasarn, S.; Veldhoven, van, P.J. et al.
In: Applied Physics Letters, Vol. 92, No. 8, 083103, 2008, p. 083103-1/3.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

AU - Ulloa Herrero, J.M.

AU - Anantathanasarn, S.

AU - Veldhoven, van, P.J.

AU - Koenraad, P.M.

AU - Nötzel, R.

PY - 2008

Y1 - 2008

N2 - Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAs/InGaAsP/InP quantum dots (QDs) are modified when an ultrathin (0–1.5 ML) GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the As/P exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the As/P exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.

AB - Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAs/InGaAsP/InP quantum dots (QDs) are modified when an ultrathin (0–1.5 ML) GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the As/P exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the As/P exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.

U2 - 10.1063/1.2884692

DO - 10.1063/1.2884692

M3 - Article

SN - 0003-6951

VL - 92

SP - 083103-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083103

ER -

Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

Abstract

Access to Document

Fingerprint

Cite this