Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

B. Hoex; A.J.M. van Erven; R.C.M. Bosch; W.T.M. Stals; M.D. Bijker; P.J. Oever, van den; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1002/pip.628

Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

B. Hoex
, A.J.M. van Erven
, R.C.M. Bosch
, W.T.M. Stals
, M.D. Bijker
, P.J. Oever, van den
, W.M.M. Kessels
, M.C.M. Sanden, van de

Research output: Contribution to journal › Article › Academic › peer-review

42 Citations (Scopus)

Abstract

High-quality surface and bulk passivation of crystalline silicon solar cells has been obtained under optimum anti-reflection coating properties by silicon nitride (a-SiNx:H) deposited at very high deposition rates of 5 nm/s. These a-SiNx:H films were deposited using the expanding thermal plasma (ETP) technology under regular processing conditions in an inline industrial-type reactor with a nominal throughput of 960 solar cells/hour. The low surface recombination velocities (50-70 cm/s) were obtained on p-type silicon substrates (8·4 cm resistivity) for as-deposited and annealed films within the broad refractive index range of 1·9-2·4, which covers the optimum bulk passivation and anti-reflection coating performance reached at a refractive index of 2·1.

Original language	English
Pages (from-to)	705-712
Journal	Progress in Photovoltaics: Research and Applications
Volume	13
Issue number	8
DOIs	https://doi.org/10.1002/pip.628
Publication status	Published - 2005

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10.1002/pip.628

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Hoex, B., van Erven, A. J. M., Bosch, R. C. M., Stals, W. T. M., Bijker, M. D., Oever, van den, P. J., Kessels, W. M. M., & Sanden, van de, M. C. M. (2005). Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions. Progress in Photovoltaics: Research and Applications, 13(8), 705-712. https://doi.org/10.1002/pip.628

@article{f092fda9ce7f49a3868f448e60df47fe,

title = "Industrial high-rate (\textasciitilde{} 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions",

abstract = "High-quality surface and bulk passivation of crystalline silicon solar cells has been obtained under optimum anti-reflection coating properties by silicon nitride (a-SiNx:H) deposited at very high deposition rates of 5 nm/s. These a-SiNx:H films were deposited using the expanding thermal plasma (ETP) technology under regular processing conditions in an inline industrial-type reactor with a nominal throughput of 960 solar cells/hour. The low surface recombination velocities (50-70 cm/s) were obtained on p-type silicon substrates (8·4 cm resistivity) for as-deposited and annealed films within the broad refractive index range of 1·9-2·4, which covers the optimum bulk passivation and anti-reflection coating performance reached at a refractive index of 2·1.",

author = "B. Hoex and \{van Erven\}, A.J.M. and R.C.M. Bosch and W.T.M. Stals and M.D. Bijker and \{Oever, van den\}, P.J. and W.M.M. Kessels and \{Sanden, van de\}, M.C.M.",

year = "2005",

doi = "10.1002/pip.628",

language = "English",

volume = "13",

pages = "705--712",

journal = "Progress in Photovoltaics: Research and Applications",

issn = "1062-7995",

publisher = "Wiley",

number = "8",

}

Hoex, B, van Erven, AJM, Bosch, RCM, Stals, WTM, Bijker, MD, Oever, van den, PJ, Kessels, WMM & Sanden, van de, MCM 2005, 'Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions', Progress in Photovoltaics: Research and Applications, vol. 13, no. 8, pp. 705-712. https://doi.org/10.1002/pip.628

Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions. / Hoex, B.; van Erven, A.J.M.; Bosch, R.C.M. et al.
In: Progress in Photovoltaics: Research and Applications, Vol. 13, No. 8, 2005, p. 705-712.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

AU - Hoex, B.

AU - van Erven, A.J.M.

AU - Bosch, R.C.M.

AU - Stals, W.T.M.

AU - Bijker, M.D.

AU - Oever, van den, P.J.

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

PY - 2005

Y1 - 2005

N2 - High-quality surface and bulk passivation of crystalline silicon solar cells has been obtained under optimum anti-reflection coating properties by silicon nitride (a-SiNx:H) deposited at very high deposition rates of 5 nm/s. These a-SiNx:H films were deposited using the expanding thermal plasma (ETP) technology under regular processing conditions in an inline industrial-type reactor with a nominal throughput of 960 solar cells/hour. The low surface recombination velocities (50-70 cm/s) were obtained on p-type silicon substrates (8·4 cm resistivity) for as-deposited and annealed films within the broad refractive index range of 1·9-2·4, which covers the optimum bulk passivation and anti-reflection coating performance reached at a refractive index of 2·1.

AB - High-quality surface and bulk passivation of crystalline silicon solar cells has been obtained under optimum anti-reflection coating properties by silicon nitride (a-SiNx:H) deposited at very high deposition rates of 5 nm/s. These a-SiNx:H films were deposited using the expanding thermal plasma (ETP) technology under regular processing conditions in an inline industrial-type reactor with a nominal throughput of 960 solar cells/hour. The low surface recombination velocities (50-70 cm/s) were obtained on p-type silicon substrates (8·4 cm resistivity) for as-deposited and annealed films within the broad refractive index range of 1·9-2·4, which covers the optimum bulk passivation and anti-reflection coating performance reached at a refractive index of 2·1.

U2 - 10.1002/pip.628

DO - 10.1002/pip.628

M3 - Article

SN - 1062-7995

VL - 13

SP - 705

EP - 712

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 8

ER -

Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

Abstract

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