Industrial high-rate (≥ 4 nm/s) deposited silicon nitride with low surface recombination velocities under optimum antireflection coating conditions

B. Hoex, A.J.M. van Erven, M.D. Bijker, P.J. Oever, van den, W.M.M. Kessels, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Physics & Astronomy