Industrial high-rate (≥ 4 nm/s) deposited silicon nitride with low surface recombination velocities under optimum antireflection coating conditions

B. Hoex, A.J.M. van Erven, M.D. Bijker, P.J. Oever, van den, W.M.M. Kessels, M.C.M. Sanden, van de

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Physics & Astronomy