Industrial application of atom probe tomography to semiconductor devices

A.D. Giddings, S. Koelling, Y. Shimizu, R. Estivill, K. Inoue, W. Vandervorst, W.K. Yeoh

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)
2 Downloads (Pure)

Abstract

Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as such, it seems uniquely suited to meet these challenges. However, the semiconductor industry has demanding requirements against which the techniques in use are evaluated. This article explores the use of APT in the semiconductor industry, showing the potential of the technique, the obstacles that occur in practise, and possible future developments.

Original languageEnglish
Pages (from-to)82-90
Number of pages9
JournalScripta Materialia
Volume148
DOIs
Publication statusPublished - 15 Apr 2018

Keywords

  • 3D Metrology
  • Atom probe tomography
  • Dopant engineering
  • Failure analysis
  • Semiconductor devices

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