Abstract
Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as such, it seems uniquely suited to meet these challenges. However, the semiconductor industry has demanding requirements against which the techniques in use are evaluated. This article explores the use of APT in the semiconductor industry, showing the potential of the technique, the obstacles that occur in practise, and possible future developments.
Original language | English |
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Pages (from-to) | 82-90 |
Number of pages | 9 |
Journal | Scripta Materialia |
Volume | 148 |
DOIs | |
Publication status | Published - 15 Apr 2018 |
Funding
Y.S. is grateful to JSPS KAKENHI grant nos. 24760246 , 26289097 , and 15H05413 . R.E. is grateful to ANRT for grant CIFRE 2012/0679 .
Keywords
- 3D Metrology
- Atom probe tomography
- Dopant engineering
- Failure analysis
- Semiconductor devices