Indium phosphide membrane nanophotonic integrated circuits on silicon

Yuqing Jiao (Corresponding author), Jos van der Tol, Vadim Pogoretskii, Jorn van Engelen, Amir Abbas Kashi, Sander Reniers, Yi Wang, Xinran Zhao, Weiming Yao, Tianran Liu, Francesco Pagliano, Andrea Fiore, Xuebing Zhang, Zizheng Cao, Rakesh Ranjan Kumar, Hon Ki Tsang, Rene van Veldhoven, Tjibbe de Vries, Erik Jan Geluk, Jeroen BolkHuub Ambrosius, Meint Smit, Kevin Williams

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13 Citations (Scopus)
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Photonic integration in a micrometer-thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high-performance optoelectronic functions together with high-index-contrast nanophotonic circuitries. Recently demonstrated devices have shown competitive performances, including high side-mode-suppression ratio (SMSR) lasers, ultrafast photodiodes, and significant improvement in critical dimensions. Applications of the IMOS devices and circuits in optical wireless, quantum photonics, and optical cross-connects have proven their performances and high potential.

Original languageEnglish
Article number1900606
Number of pages12
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number3
Publication statusPublished - 1 Feb 2020


  • indium phosphide
  • membranes
  • nanophotonics
  • photonic integrated circuits
  • photonic integration
  • semiconductor laser
  • waveguides


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