Abstract
Photonic integration in a micrometer-thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high-performance optoelectronic functions together with high-index-contrast nanophotonic circuitries. Recently demonstrated devices have shown competitive performances, including high side-mode-suppression ratio (SMSR) lasers, ultrafast photodiodes, and significant improvement in critical dimensions. Applications of the IMOS devices and circuits in optical wireless, quantum photonics, and optical cross-connects have proven their performances and high potential.
Original language | English |
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Article number | 1900606 |
Number of pages | 12 |
Journal | Physica Status Solidi A : Applications and material science |
Volume | 217 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 Feb 2020 |
Funding
This work was supported in part by the ERC Advanced Grant NOLIMITS, the ERC Proof‐of‐Concept Grant IMOS4ALL and the Dutch NWO Grant Zwaartekracht. The use of the cleanroom facilities at the Nanolab@TU/e is acknowledged.
Funders | Funder number |
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European Union's Horizon 2020 - Research and Innovation Framework Programme | 862517 |
H2020 European Research Council | IMOS4ALL |
Nederlandse Organisatie voor Wetenschappelijk Onderzoek |
Keywords
- indium phosphide
- membranes
- nanophotonics
- photonic integrated circuits
- photonic integration
- semiconductor laser
- waveguides