Increasing the speed of an InP-based integration platform by introducing high speed electro-absorption modulators

Marija Trajkovic (Corresponding author), Fabrice Blache, Helene Debregeas, Kevin Williams, Xaveer Leijtens

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block (BB) is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low DC bias voltage below 1 V at increased temperature, as well as operation in a semi-cooled environment, tested in the range of 20−60∘C . Furthermore, we improve the intrinsic S-parameter response with a co-design circuit. The intrinsic 3-dB bandwidth of a 100 μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three time speed increase of the existing platform, from previously offered 9 GHz (using an electro-optical modulator) to 24 GHz shown in this work.
LanguageEnglish
Article number8701484
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume25
Issue number5
Early online date29 Apr 2019
DOIs
StatePublished - 1 Sep 2019

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Modulators
modulators
platforms
high speed
Bandwidth
bandwidth
Light modulators
Scattering parameters
Foundries
foundries
Bias voltage
layouts
extinction
direct current
Networks (circuits)
electric potential
Temperature

Keywords

  • electro-absorption modulators
  • high speed integrated circuits
  • Photonic integrated circuits

Cite this

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title = "Increasing the speed of an InP-based integration platform by introducing high speed electro-absorption modulators",
abstract = "We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block (BB) is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low DC bias voltage below 1 V at increased temperature, as well as operation in a semi-cooled environment, tested in the range of 20−60∘C . Furthermore, we improve the intrinsic S-parameter response with a co-design circuit. The intrinsic 3-dB bandwidth of a 100 μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three time speed increase of the existing platform, from previously offered 9 GHz (using an electro-optical modulator) to 24 GHz shown in this work.",
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Increasing the speed of an InP-based integration platform by introducing high speed electro-absorption modulators. / Trajkovic, Marija (Corresponding author); Blache, Fabrice; Debregeas, Helene; Williams, Kevin; Leijtens, Xaveer.

In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 25, No. 5, 8701484, 01.09.2019.

Research output: Contribution to journalArticleAcademicpeer-review

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