Increasing the speed of an InP-based integration platform by introducing high speed electro-absorption modulators

Marija Trajkovic (Corresponding author), Fabrice Blache, Helene Debregeas, Kevin Williams, Xaveer Leijtens

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
121 Downloads (Pure)

Abstract

We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block (BB) is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low DC bias voltage below 1 V at increased temperature, as well as operation in a semi-cooled environment, tested in the range of 20−60∘C . Furthermore, we improve the intrinsic S-parameter response with a co-design circuit. The intrinsic 3-dB bandwidth of a 100 μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three time speed increase of the existing platform, from previously offered 9 GHz (using an electro-optical modulator) to 24 GHz shown in this work.
Original languageEnglish
Article number8701484
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume25
Issue number5
Early online date29 Apr 2019
DOIs
Publication statusPublished - 1 Sep 2019

Keywords

  • electro-absorption modulators
  • high speed integrated circuits
  • Photonic integrated circuits

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