Increase of the photoluminescence intensity of InP nanowires by photoassisted surface passivation

L.K. Vugt, Van, S.J. Veen, E.P.A.M. Bakkers, A.L. Roest, D. Vanmaekelbergh

Research output: Contribution to journalArticleAcademicpeer-review

90 Citations (Scopus)

Abstract

As-grown single-crystal InP nanowires, covered with a surface oxide, show a photoluminescence efficiency that strongly varies from wire to wire. We show that the luminescence efficiency of single-crystal InP nanowires can be improved by photoassisted wet chemical etching in a butanol solution containing HF and the indium-coordinating ligand trioctylphosphine oxide. Electron-hole photogeneration, electron scavenging, and oxidative dissolution combined with surface passivation by the indium-coordinating ligand are essential elements to improve the luminescence efficiency. Time traces of the luminescence of surface-passivated wires show strong oscillations resembling the on-off blinking observed with single quantum dots. These results reflect the strong influence of a single or a few nonradiative recombination center(s) on the luminescence properties of an entire wire. © 2005 American Chemical Society. U7 - Export Date: 2 August 2010 U7 - Source: Scopus
Original languageEnglish
Pages (from-to)12357-12362
JournalJournal of the American Chemical Society
Volume127
Issue number35
DOIs
Publication statusPublished - 2005

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