InAs/InP(100) quantum dot (QD) waveguide photodetectors are presented in this paper. The devices are fabricated using the layer stack of semiconductor optical amplifiers (SOAs) and are compatible with the active-passive integration technology. The characterization and simulation on the devices have shown good potential to be used in a monolithically integrated swept-source optical coherence tomography (SS-OCT) system in 1.6 to 1.8 µm wavelength range.
|Title of host publication||Proceedings of the 16th European Conference on Integrated Optics (ECIO 2012), 18-20 April 2012, Sitges, Spain|
|Publication status||Published - 2012|