InAs/InP(100) QD waveguide photodetectors for a monolithically integrated optical coherence tomography system around 1.7 μm

Y. Jiao; B.W. Tilma; J. Kotani; R. Nötzel; M.K. Smit; E.A.J.M. Bente

InAs/InP(100) QD waveguide photodetectors for a monolithically integrated optical coherence tomography system around 1.7 μm

Y. Jiao, B.W. Tilma, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

InAs/InP(100) quantum dot (QD) waveguide photodetectors are presented in this paper. The devices are fabricated using the layer stack of semiconductor optical amplifiers (SOAs) and are compatible with the active-passive integration technology. The characterization and simulation on the devices have shown good potential to be used in a monolithically integrated swept-source optical coherence tomography (SS-OCT) system in 1.6 to 1.8 µm wavelength range.

Original language	English
Title of host publication	Proceedings of the 16th European Conference on Integrated Optics (ECIO 2012), 18-20 April 2012, Sitges, Spain
Publication status	Published - 2012

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title = "InAs/InP(100) QD waveguide photodetectors for a monolithically integrated optical coherence tomography system around 1.7 μm",

abstract = "InAs/InP(100) quantum dot (QD) waveguide photodetectors are presented in this paper. The devices are fabricated using the layer stack of semiconductor optical amplifiers (SOAs) and are compatible with the active-passive integration technology. The characterization and simulation on the devices have shown good potential to be used in a monolithically integrated swept-source optical coherence tomography (SS-OCT) system in 1.6 to 1.8 µm wavelength range.",

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year = "2012",

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InAs/InP(100) QD waveguide photodetectors for a monolithically integrated optical coherence tomography system around 1.7 μm. / Jiao, Y.; Tilma, B.W.; Kotani, J. et al.
Proceedings of the 16th European Conference on Integrated Optics (ECIO 2012), 18-20 April 2012, Sitges, Spain. 2012.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - InAs/InP(100) QD waveguide photodetectors for a monolithically integrated optical coherence tomography system around 1.7 μm

AU - Jiao, Y.

AU - Tilma, B.W.

AU - Kotani, J.

AU - Nötzel, R.

AU - Smit, M.K.

AU - Bente, E.A.J.M.

PY - 2012

Y1 - 2012

N2 - InAs/InP(100) quantum dot (QD) waveguide photodetectors are presented in this paper. The devices are fabricated using the layer stack of semiconductor optical amplifiers (SOAs) and are compatible with the active-passive integration technology. The characterization and simulation on the devices have shown good potential to be used in a monolithically integrated swept-source optical coherence tomography (SS-OCT) system in 1.6 to 1.8 µm wavelength range.

AB - InAs/InP(100) quantum dot (QD) waveguide photodetectors are presented in this paper. The devices are fabricated using the layer stack of semiconductor optical amplifiers (SOAs) and are compatible with the active-passive integration technology. The characterization and simulation on the devices have shown good potential to be used in a monolithically integrated swept-source optical coherence tomography (SS-OCT) system in 1.6 to 1.8 µm wavelength range.

M3 - Conference contribution

BT - Proceedings of the 16th European Conference on Integrated Optics (ECIO 2012), 18-20 April 2012, Sitges, Spain

ER -

InAs/InP(100) QD waveguide photodetectors for a monolithically integrated optical coherence tomography system around 1.7 μm

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